公开(公告)号：US20190123084A1

公开(公告)日：2019-04-25

申请号：US16217739

申请日：2018-12-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Swarnal BORTHAKUR

IPC: H01L27/146

Abstract: Color filters may affect imaging performance attributes such as low light sensitivity, color accuracy, and modulation transfer function (MTF). In an image pixel array, these factors are influenced by both the spectral absorption and pattern of the color filter elements. Different portions of an image sensor may prioritize different imaging performance attributes. Accordingly, in certain applications it may be beneficial for color filter characteristics to vary across an image sensor. Different color filters of the same color may have different structures to optimize imaging performance across the image sensor.

公开(公告)号：US20170347042A1

公开(公告)日：2017-11-30

申请号：US15162914

申请日：2016-05-24

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER

IPC: H04N5/355 ,  H04N5/225 ,  G02B13/00

CPC classification number: H04N5/355 ,  G01B11/24 ,  G02B13/0045 ,  H01L27/14627 ,  H04N5/23212 ,  H04N5/35563 ,  H04N5/3696 ,  H04N9/045 ,  H04N2209/045

Abstract: An image sensor may have a pixel array, and the pixel array may include a plurality of image pixels that gather image data and a plurality of phase detection pixels that gather phase information. The phase detection pixels may be arranged in phase detection pixel blocks, and each phase detection pixel group may include edge pixels. The edge pixels of each phase detection pixel group may be covered by microlenses that also cover a portion of a center pixel. The pixel array may also include high dynamic range pixel blocks. Each high dynamic range pixel block may include pixels within the phase detection pixel block and other pixels (e.g., corner pixels). A subset of the plurality of image pixels in the pixel array may be arranged in pixel blocks. Each pixel block may include a phase detection pixel block and a high dynamic range pixel block.

公开(公告)号：US20170339355A1

公开(公告)日：2017-11-23

申请号：US15159500

申请日：2016-05-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Victor LENCHENKOV ,  Ulrich BOETTIGER

IPC: H04N5/369 ,  H01L27/146

CPC classification number: H04N5/3696 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H04N9/045

Abstract: An image sensor may include a pixel array with global shutter phase detection pixels. The global shutter phase detection pixels may include global shutter charge storage regions. To prevent the global shutter charge storage regions from being exposed to incident light, a shielding layer may be provided. The shielding layer may also cover portions of underlying photodiodes to produce an asymmetric response to incident light in the underlying photodiodes. The shielding layer may be formed as backside trench isolation with an absorptive metal. The absorptive metal may absorb incident light, reducing the likelihood of the incident light reaching the charge storage regions. An additional absorptive layer may also be provided on or in the shielding layer.

公开(公告)号：US20210280623A1

公开(公告)日：2021-09-09

申请号：US16808066

申请日：2020-03-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Stanley MICINSKI

IPC: H01L27/146

Abstract: An image sensor may include one or more phase detection pixel groups. A phase detection pixel group may include at least two phase detection pixels with respective photosensitive areas and a per-group microlens that covers all of the phase detection pixels in that group. Each phase detection pixel may have an asymmetric response to incident light. The phase detection pixel group may also include per-pixel microlenses that each cover a respective photosensitive area of a phase detection pixel. The per-group microlens may overlap the per-pixel microlenses. A low-index filler may be interposed between the per-group microlens and the per-pixel microlenses. The per-pixel microlenses may be incorporated into phase detection pixel groups in both front-side illuminated image sensors and back-side illuminated image sensors. The phase detection pixel groups may have a 2×2 arrangement.

公开(公告)号：US20190376899A1

公开(公告)日：2019-12-12

申请号：US16005027

申请日：2018-06-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER

IPC: G01N21/64

Abstract: Various embodiments of the present technology may comprise a method and apparatus for a biosensor. The biosensor comprises a vertical flow channel that extends through a photodiode, and wherein the photodiode is lateral to the channel's vertical sidewall.

公开(公告)号：US20190051688A1

公开(公告)日：2019-02-14

申请号：US15676664

申请日：2017-08-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Swarnal BORTHAKUR

IPC: H01L27/146

Abstract: Color filters may affect imaging performance attributes such as low light sensitivity, color accuracy, and modulation transfer function (MTF). In an image pixel array, these factors are influenced by both the spectral absorption and pattern of the color filter elements. Different portions of an image sensor may prioritize different imaging performance attributes. Accordingly, in certain applications it may be beneficial for color filter characteristics to vary across an image sensor. Different color filters of the same color may have different structures to optimize imaging performance across the image sensor.

公开(公告)号：US20180069049A1

公开(公告)日：2018-03-08

申请号：US15258783

申请日：2016-09-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14687 ,  H01L27/14632 ,  H01L27/14806

Abstract: A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.

公开(公告)号：US20200286944A1

公开(公告)日：2020-09-10

申请号：US16460833

申请日：2019-07-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0232 ,  H01L31/0216

Abstract: A semiconductor device may include an array of single-photon avalanche diode pixels. The single-photon avalanche diode (SPAD) pixels may be capable of detecting a single photon. To improve dynamic range, a light attenuating layer may be incorporated into the semiconductor device. The light attenuating layer may selectively attenuate the incident light that passes to select SPAD pixels according to a known ratio. Processing circuitry in the system can determine that, for every photon detected by a SPAD pixel receiving attenuated light, more incident photons were actually received in accordance with the ratio. In this way, high photon fluxes may accurately be detected. SPAD pixels covered by a light attenuating element with low attenuation may be sensitive to low incident light levels. SPAD pixels covered by a light attenuating element with high attenuation may be sensitive to high incident light levels.

公开(公告)号：US20200007853A1

公开(公告)日：2020-01-02

申请号：US16023077

申请日：2018-06-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marko MLINAR ,  Ulrich BOETTIGER

IPC: H04N13/271 ,  H04N9/04 ,  H04N5/33 ,  G06T7/521

Abstract: An imaging system may include an image sensor, a lens, and layers with reflective properties, such as an infrared cut-off filter, between the lens and the image sensor. The lens may focus light from an object in a scene onto the image sensor. Some of the light directed onto the image sensor may form a first image on the image sensor. Other portions of the light directed onto the image sensor may reflect off of the image sensor and back towards the layers with reflective properties. These layers may reflect the light back onto the image sensor, forming a second image that is shifted relative to the first image. Depth mapping circuitry may compare the first and second images to determine the distance between the imaging system and the object in the scene.

公开(公告)号：US20180331150A1

公开(公告)日：2018-11-15

申请号：US16038422

申请日：2018-07-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14687 ,  H01L27/14607 ,  H01L27/14632 ,  H01L27/14806

Abstract: A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.