公开(公告)号：US20180374931A1

公开(公告)日：2018-12-27

申请号：US16103518

申请日：2018-08-14

Applicant: Semiconductor Components Industries, LLC

Inventor： Umesh SHARMA ,  Harry Yue GEE ,  Der Min LIOU ,  David D. MARREIRO ,  Sudhama C. SHASTRI

IPC: H01L29/66 ,  H01L29/861 ,  H01L23/00 ,  H01L29/866 ,  H01L27/02

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.

公开(公告)号：US20160225756A1

公开(公告)日：2016-08-04

申请号：US15094853

申请日：2016-04-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： David D. MARREIRO ,  Yupeng CHEN ,  Ralph WALL ,  Umesh SHARMA ,  Harry Yue GEE

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L27/0248 ,  H01L29/7416

Abstract: In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.

Abstract translation: 在一个实施例中，ESD装置被配置为包括有助于形成ESD装置的触发的触发装置。 触发装置被配置为使得响应于具有不小于ESD装置的触发值的值的输入电压的SCR的晶体管或晶体管。