公开(公告)号：US20240395922A1

公开(公告)日：2024-11-28

申请号：US18796258

申请日：2024-08-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter COPPENS ,  Peter MOENS ,  Joris BAELE

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

Abstract: A High Electron Mobility Transistor (HEMT) includes a source, a drain, a channel layer extending between the source and the drain, a barrier layer formed in contact with the channel layer, and extending between the source and the drain, and a gate formed in contact with, and covering at least a portion of, the barrier layer. The gate has gate edge portions and a gate central portion, and dielectric spacers may be formed over the gate edge portions, with the dielectric spacers having a first width therebetween proximal to the gate, and a second width therebetween distal from the gate, where the second width is longer than the first width.

公开(公告)号：US20200144194A1

公开(公告)日：2020-05-07

申请号：US16183078

申请日：2018-11-07

Applicant: Semiconductor Components Industries, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS ,  Joris BAELE

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/04 ,  H01L21/786

Abstract: An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.

公开(公告)号：US20220262940A1

公开(公告)日：2022-08-18

申请号：US17248989

申请日：2021-02-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter COPPENS ,  Peter MOENS ,  Joris BAELE

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66

Abstract: A High Electron Mobility Transistor (HEMT) includes a source, a drain, a channel layer extending between the source and the drain, a barrier layer formed in contact with the channel layer, and extending between the source and the drain, and a gate formed in contact with, and covering at least a portion of, the barrier layer. The gate has gate edge portions and a gate central portion, and dielectric spacers may be formed over the gate edge portions, with the dielectric spacers having a first width therebetween proximal to the gate, and a second width therebetween distal from the gate, where the second width is longer than the first width.

公开(公告)号：US20220254894A1

公开(公告)日：2022-08-11

申请号：US17172243

申请日：2021-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Joris BAELE

IPC: H01L29/423 ,  H01L29/778 ,  H01L29/66

Abstract: An electronic device can include a gate structure. In an embodiment, the gate structure can include a gate electrode including a doped semiconductor material, a metal-containing member, a pair of conductive sidewall spacers. The first metal-containing member can overlie the gate electrode. The conductive sidewall spacers can overlie the gate electrode and along opposite sides of the first metal-containing member. In another embodiment, the gate structure can include a gate electrode, a first metal-containing member overlying the gate electrode, and a second metal-containing member overlying the first metal-containing member. The first metal-containing member can have a length that is greater than the length of the second metal-containing member and substantially the same length as the gate electrode.