公开(公告)号：US20220085213A1

公开(公告)日：2022-03-17

申请号：US17456266

申请日：2021-11-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli WU ,  Joseph Andrew YEDINAK

IPC: H01L29/78 ,  H01L27/07 ,  H01L29/10

Abstract: A semiconductor device includes a region of semiconductor material of a first conductivity type and having a first major surface. A body region of a second conductivity type opposite to the first conductivity type is in the region of semiconductor material. The body region includes a stripe region; a first segment in the stripe region and having a first peak dopant concentration, a first depth into the region of semiconductor material, and a first length along the first major surface; and a second segment in the stripe region laterally adjacent to the first segment, adjacent to the first major surface, and having a second peak dopant concentration, a second depth into the region of semiconductor material, and a second length along the first major surface. A source region of the first conductivity type is in the first segment but not in at least part of the second segment. An insulated gate electrode adjoins the first segment and is configured to provide a first channel region in the first segment, adjoins the second segment and configured to provide a second channel region in the second segment, and adjoins the first source region. A conductive structure is connected to the first segment, the second segment, and the source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

公开(公告)号：US20190157383A1

公开(公告)日：2019-05-23

申请号：US16257866

申请日：2019-01-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Joseph YEDINAK ,  Xiaoli WU

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/0623 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/105 ,  H01L29/407 ,  H01L29/42356 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8725

Abstract: In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can have a plurality of segments, at least one of the segments being disposed in the mesa. The trench shield electrodes can be disposed between segments of the implant enrichment region.

公开(公告)号：US20190006512A1

公开(公告)日：2019-01-03

申请号：US15639961

申请日：2017-06-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli WU ,  Joseph Yedinak

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/06

CPC classification number: H01L29/7811 ,  H01L29/0649 ,  H01L29/0684 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41 ,  H01L29/7813

Abstract: In a general aspect, a power semiconductor device can include a semiconductor region having an active region and a termination region. The device can also include a plurality of trench shield electrodes each having a first portion disposed in the active region and a second portion disposed in the termination region. One or more of the trench shield electrodes can have a second portion that extends a first distance into the termination region, while one or more other trench shield electrodes can have a second portion that extends a second distance into the termination region, the second distance being less than the first distance. The trench shield electrode(s) having the second portion that extends the second distance into the termination region can be interleaved with the trench shield electrode(s) having the second portion that extends the first distance into the termination region.

公开(公告)号：US20230223474A1

公开(公告)日：2023-07-13

申请号：US18188233

申请日：2023-03-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli WU ,  Joseph Andrew YEDINAK

IPC: H01L29/10 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1095 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/66734

Abstract: A semiconductor device includes a region of semiconductor material of a first conductivity type. A body region of a second conductivity type is in the region of semiconductor material. The body region includes a first segment with a first peak dopant concentration, and a second segment laterally adjacent to the first segment with a second peak dopant concentration. A source region of the first conductivity type is in the first segment but not in at least part of the second segment. An insulated gate electrode adjoins the first segment and is configured to provide a first channel region in the first segment, adjoins the second segment and is configured to provide a second channel region in the second segment, and adjoins the source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

公开(公告)号：US20180315812A1

公开(公告)日：2018-11-01

申请号：US15581774

申请日：2017-04-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Joseph YEDINAK ,  Xiaoli WU

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/0623 ,  H01L29/105 ,  H01L29/42356 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813

Abstract: In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can be intersected by the first trench shield electrode and the second trench shield electrode, and can have a portion disposed in the mesa of the semiconductor region, the portion extending from the trench of the first trench shield electrode to the trench of the second trench shield electrode.