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公开(公告)号：US20220020872A1
公开(公告)日：2022-01-20
申请号：US17369479
申请日：2021-07-07
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Herbert DE VLEESCHOUWER , Jaume ROIG-GUITART , Peter MOENS , Mohammad Shawkat ZAMAN , Olivier TRESCASES
IPC: H01L29/778 , G01R31/26 , G01R19/00 , H01L29/20
Abstract: In an embodiment, a HEMT is formed to have a main transistor having a main active area and a sense transistor having a sense active area. An embodiment may include that the main active area is isolated from the sense active area.
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