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    VERTICAL TRANSISTORS WITH GATE CONNECTION GRID
    3.
    发明申请
    VERTICAL TRANSISTORS WITH GATE CONNECTION GRID 有权

    公开(公告)号：US20220285248A1

    公开(公告)日：2022-09-08

    申请号：US17194846

    申请日：2021-03-08

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Thomas NEYER ,  Herbert DE VLEESCHOUWER ,  Fredrik ALLERSTAM

    IPC: H01L23/482 ,  H01L29/16 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L21/768 ,  H01L29/66

    Abstract: In a general aspect, a semiconductor device can include a plurality of vertical transistor segments disposed in an active region of a semiconductor region. The plurality of vertical transistor segments can include respective gate electrodes. A first dielectric can be disposed on the active region. An electrically conductive grid can be disposed on the first dielectric. The electrically conductive grid can be electrically coupled with the respective gate electrodes using a plurality of conductive contacts formed through the first dielectric. A second dielectric can be disposed on the electrically conductive grid and the first dielectric. A conductive metal layer can be disposed on the second dielectric layer. The conductive metal layer can include a portion that is electrically coupled with the respective gate electrodes through the electrically conductive grid using at least one conductive contact to the electrically conductive grid formed through the second dielectric.

    ELECTRONIC DEVICE INCLUDING A TEMPERATURE SENSOR
    5.
    发明申请
    ELECTRONIC DEVICE INCLUDING A TEMPERATURE SENSOR 审中-公开

    公开(公告)号：US20180356296A1

    公开(公告)日：2018-12-13

    申请号：US15621093

    申请日：2017-06-13

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jaume ROIG-GUITART ,  Herbert DE VLEESCHOUWER ,  Gordon M. GRIVNA

    IPC: G01K7/20 ,  G01K7/01 ,  H01L29/08

    Abstract: An electronic device can include a temperature sensor. The temperature sensor can include a drain electrode including drain fingers spaced apart from the source fingers; a source electrode including source fingers spaced apart from the drain fingers; and a gate electrode including a runner, gate fingers and a conductive bridge. In an embodiment, the runner includes a first portion and a second portion spaced apart from the first portion, the gate fingers are coupled to the runner and each gate finger is disposed between a pair of the source and drain fingers. The conductive bridge connects at least two gate fingers, wherein the conductive bridge is along a conduction path between the first and second portions of the runner. Designs for the temperature sensor may provide a more accurate temperature measurement reflective of a transistor within the electronic device.

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