公开(公告)号：US20220207351A1

公开(公告)日：2022-06-30

申请号：US17137773

申请日：2020-12-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Tirthajyoti SARKAR ,  Diann M. DOW ,  Gary Horst LOECHELT ,  Prateek SHARMA

IPC: G06N3/08 ,  G06F30/31 ,  G06F30/367 ,  G06N3/04

Abstract: According to an aspect, a semiconductor design system includes at least one neural network including a first predictive model and a second predictive model, where the first predictive model is configured to predict a first characteristic of a semiconductor device, and the second predictive model is configured to predict a second characteristic of the semiconductor device. The semiconductor design system includes an optimizer configured to use the neural network to generate a design model based on a set of input parameters, where the design model includes a set of design parameters for the semiconductor device such that the first characteristic and the second characteristic achieve respective threshold conditions.

公开(公告)号：US20210133550A1

公开(公告)日：2021-05-06

申请号：US16673167

申请日：2019-11-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Stanislav SELEZNEV ,  Prateek SHARMA

IPC: G06N3/063 ,  H01L27/06 ,  H01L21/822 ,  H01L23/522 ,  H01L21/768 ,  H01L29/861 ,  H01L49/02 ,  G06N3/04

Abstract: In an embodiment, a method of forming a neural network circuit may include forming a dielectric layer overlying a semiconductor substrate that has active devices formed in the semiconductor substrate. An opening may be formed in the dielectric layer, and a series connected resistor and diode may be formed within the opening.