公开(公告)号：US20220207351A1

公开(公告)日：2022-06-30

申请号：US17137773

申请日：2020-12-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Tirthajyoti SARKAR ,  Diann M. DOW ,  Gary Horst LOECHELT ,  Prateek SHARMA

IPC: G06N3/08 ,  G06F30/31 ,  G06F30/367 ,  G06N3/04

Abstract: According to an aspect, a semiconductor design system includes at least one neural network including a first predictive model and a second predictive model, where the first predictive model is configured to predict a first characteristic of a semiconductor device, and the second predictive model is configured to predict a second characteristic of the semiconductor device. The semiconductor design system includes an optimizer configured to use the neural network to generate a design model based on a set of input parameters, where the design model includes a set of design parameters for the semiconductor device such that the first characteristic and the second characteristic achieve respective threshold conditions.

公开(公告)号：US20220278171A1

公开(公告)日：2022-09-01

申请号：US17188466

申请日：2021-03-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derryl ALLMAN ,  Diann M. DOW

IPC: H01L27/24 ,  H01L29/861 ,  H01L29/66 ,  H01L45/00 ,  G11C13/00 ,  G06N3/02

Abstract: Implementations of a diode may include a first electrode; a first dielectric layer coupled to the first electrode; a second dielectric layer coupled to the first dielectric layer; and a second electrode coupled to the second dielectric layer. The first dielectric layer may be one of silicon dioxide or aluminum oxide; and the second dielectric layer may be one of niobium oxide, tantalum oxide, zirconium oxide, hafnium oxide, or any combination thereof.