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    PIXELS FOR HIGH PERFORMANCE IMAGE SENSOR
    1.
    发明申请
    PIXELS FOR HIGH PERFORMANCE IMAGE SENSOR 有权

    公开(公告)号：US20170229496A1

    公开(公告)日：2017-08-10

    申请号：US15174396

    申请日：2016-06-06

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Sergey VELICHKO ,  Victor LENCHENKOV ,  Irfan RAHIM

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    Abstract: Visual and near infrared pixels may have deep photodiodes to ensure sufficient capture of light. The pixels may have a silicon layer that is etched to form a microlens for the pixel. The pixels may include an inversion layer formed over the silicon layer to prevent dark current. Additionally, the pixels may include a conductive layer formed over the inversion layer that further prevents dark current. The conductive layer may be coupled to a bias voltage supply line. The conductive layer may be biased during image acquisition to prevent dark current. During readout, the bias voltage may be pulsed at a lower voltage to ensure all of the collected charge is transferred out of the photodiode during charge transfer.

    IMAGING SENSOR PIXELS HAVING BUILT-IN GRATING
    2.
    发明申请
    IMAGING SENSOR PIXELS HAVING BUILT-IN GRATING 有权

    公开(公告)号：US20210266431A1

    公开(公告)日：2021-08-26

    申请号：US16798747

    申请日：2020-02-24

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor LENCHENKOV

    IPC: H04N5/225 ,  G02B5/18 ,  G02B1/11

    Abstract: An image sensor may include an array of image pixels that generate charge in response to light. To determine the color of the light, each image pixel may have a built-in diffusion grating and underlying photodiodes. The diffusion grating may diffract light in a wavelength-dependent manner, and the underlying photodiodes may detect a pattern of the diffracted light. Processing circuitry may store patterns corresponding to known colors. The processing circuitry may compare the detected pattern of the diffracted light to the patterns of light of the known colors, and thereby determine the color of the light through a process such as interpolating between the known patterns. This may eliminate the need for color filters in each pixel and increase the amount of detected light within each pixel. Image sensors having pixels with diffractive gratings may be used in cameras, microscopes, Raman spectrometers, and medical devices.

    IMAGE SENSORS WITH HEATING EFFECT AND RELATED METHODS
    3.
    发明申请
    IMAGE SENSORS WITH HEATING EFFECT AND RELATED METHODS 审中-公开

    公开(公告)号：US20200098819A1

    公开(公告)日：2020-03-26

    申请号：US16695383

    申请日：2019-11-26

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor LENCHENKOV ,  Hamid Reza SOLEIMANI

    IPC: H01L27/146

    Abstract: Implementations of image sensors may include a semiconductor layer including a photodiode, a metal layer or metal silicide layer directly coupled to a first side of the photodiode, and a storage node coupled within a second side of the photodiode. The metal layer or metal silicide layer may be configured to absorb one or more predetermined wavelengths of incident light and correspondingly heat a portion of the semiconductor layer.

    OPTICAL TOUCH SCREEN SYSTEM USING RADIATION PATTERN SENSING AND METHOD THEREFOR
    4.
    发明申请
    OPTICAL TOUCH SCREEN SYSTEM USING RADIATION PATTERN SENSING AND METHOD THEREFOR 审中-公开
    使用辐射图感应的光学触摸屏系统及其方法

    公开(公告)号：US20170024083A1

    公开(公告)日：2017-01-26

    申请号：US14806388

    申请日：2015-07-22

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Terry GILTON ,  Victor LENCHENKOV ,  Brian W. KEELAN

    IPC: G06F3/042

    CPC classification number: G06F3/0421 ,  G06F3/0412

    Abstract: In one form, a touch screen includes an optically transmissive medium, first and second light sources, a detection circuit, and a control circuit. The first light source is positioned to emit light across the optically transmissive medium in a first direction, and the second light source is positioned to emit light across the optically transmissive medium in a second direction orthogonal to the first direction. The detection circuit detects standing wave patterns of light emitted by the first and second light sources along the first and second directions. The control circuit is coupled to the detection circuit and measures a first standing wave pattern in an untouched condition, and a second standing wave pattern in a touched condition. The control circuit detects a touch location in response to a difference between the first standing wave pattern and the second standing wave pattern.

    Abstract translation: 在一种形式中，触摸屏包括光透射介质，第一和第二光源，检测电路和控制电路。 第一光源被定位成沿第一方向在光透射介质上发射光，并且第二光源被定位成在与第一方向正交的第二方向上在光透射介质上发射光。 检测电路检测由第一和第二光源沿着第一和第二方向发射的光的驻波图案。 控制电路耦合到检测电路，并测量处于未触摸状态的第一驻波模式和处于触摸状态的第二驻波模式。 控制电路响应于第一驻波图案和第二驻波图案之间的差异来检测触摸位置。

    IMAGING SYSTEMS WITH IMPROVED MICROLENSES FOR ENHANCED NEAR-INFRARED DETECTION
    5.
    发明申请
    IMAGING SYSTEMS WITH IMPROVED MICROLENSES FOR ENHANCED NEAR-INFRARED DETECTION 有权

    公开(公告)号：US20210280624A1

    公开(公告)日：2021-09-09

    申请号：US16810971

    申请日：2020-03-06

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor LENCHENKOV

    IPC: H01L27/146

    Abstract: An imaging device may have an array of image sensor pixels that includes infrared pixels. The infrared pixels may be formed from a silicon layer and having an etched microlens on an upper surface of the silicon layer. The etched microlens may be formed as concentric circles, concentric squares, or other concentric shapes to improve the focusing of incident light on the photosensitive portion of the silicon layer. Additionally, there may be a plurality of silicon—silicon-oxide interfaces or silicon—silicon-nitride interfaces between the etched microlens and the silicon layer. These interfaces may increase the absorption of infrared light by the underlying silicon layer. Similar interfaces may be formed on a lower surface, either as an etched region or as an additional dielectric layer. Alternatively or additionally, the infrared pixels may include a conductive patch between the silicon layer and microlens that similarly increases the absorption of infrared light.

    IMAGING SYSTEMS WITH GLOBAL SHUTTER PHASE DETECTION PIXELS
    6.
    发明申请
    IMAGING SYSTEMS WITH GLOBAL SHUTTER PHASE DETECTION PIXELS 审中-公开

    公开(公告)号：US20170339355A1

    公开(公告)日：2017-11-23

    申请号：US15159500

    申请日：2016-05-19

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor LENCHENKOV ,  Ulrich BOETTIGER

    IPC: H04N5/369 ,  H01L27/146

    CPC classification number: H04N5/3696 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H04N9/045

    Abstract: An image sensor may include a pixel array with global shutter phase detection pixels. The global shutter phase detection pixels may include global shutter charge storage regions. To prevent the global shutter charge storage regions from being exposed to incident light, a shielding layer may be provided. The shielding layer may also cover portions of underlying photodiodes to produce an asymmetric response to incident light in the underlying photodiodes. The shielding layer may be formed as backside trench isolation with an absorptive metal. The absorptive metal may absorb incident light, reducing the likelihood of the incident light reaching the charge storage regions. An additional absorptive layer may also be provided on or in the shielding layer.

    IMAGE SENSORS WITH BACKSIDE TRENCH STRUCTURES
    7.
    发明申请
    IMAGE SENSORS WITH BACKSIDE TRENCH STRUCTURES 有权
    具有背面TRENCH结构的图像传感器

    公开(公告)号：US20170005121A1

    公开(公告)日：2017-01-05

    申请号：US14788168

    申请日：2015-06-30

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor LENCHENKOV ,  Sergey VELICHKO

    IPC: H01L27/146 ,  H04N5/369 ,  H01L27/148

    CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/353 ,  H04N5/369 ,  H04N5/37452

    Abstract: A backside illumination image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode, a storage diode, and associated circuitry formed in a front side of a semiconductor substrate. In accordance with an embodiment, a trench isolation structure may be formed directly over the storage diode but not over the photodiode from a back side of the substrate. The backside trench isolation structure may be filled with absorptive material and can optionally be biased to a ground or negative voltage level. A light shielding layer may also be formed over the backside trench isolation structure on the back side of the substrate. The light shielding layer may be formed from absorptive material or reflective material, and may also be biased to a ground or negative voltage level.

    Abstract translation: 提供具有图像传感器像素阵列的背面照明图像传感器。 每个像素可以包括形成在半导体衬底的前侧的光电二极管，存储二极管和相关电路。 根据实施例，沟槽隔离结构可以直接形成在存储二极管上，而不是从衬底的背侧在光电二极管的上方形成。 背面沟槽隔离结构可以填充有吸收材料，并且可以可选地被偏置到接地或负电压电平。 也可以在衬底的背侧上的背面沟槽隔离结构之上形成遮光层。 遮光层可以由吸收材料或反射材料形成，并且也可以被偏置到接地或负电压电平。

    MICROLENS DEVICE AND RELATED METHODS
    9.
    发明申请
    MICROLENS DEVICE AND RELATED METHODS 有权

    公开(公告)号：US20210197506A1

    公开(公告)日：2021-07-01

    申请号：US16836693

    申请日：2020-03-31

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Min JANG ,  Victor LENCHENKOV

    IPC: B29D11/00 ,  H01L27/146

    Abstract: Implementations of semiconductor devices may include: a microlens array formed of a plurality of microlenses. Each of the plurality of microlenses may have a first side and a second side. A layer of polymer may be formed over the second side of each of the plurality of microlenses and a low index box may be between adjacent microlenses of the plurality of microlenses.

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