公开(公告)号：US11749784B2

公开(公告)日：2023-09-05

申请号：US17118731

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

IPC: H01L33/40 ,  H01S5/125 ,  H10K10/84

CPC classification number: H01L33/405 ,  H01S5/125 ,  H10K10/84

Abstract: A light emitting device includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers at least a portion of the light emitting structure, the transparent electrode and the contact electrode. The second insulating reflection layer is disposed on an opposite end of the substrate. The first and/or second insulating reflection layer have at least two regions which have different reflectivity properties.

公开(公告)号：US10923642B2

公开(公告)日：2021-02-16

申请号：US16426103

申请日：2019-05-30

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Sang Won Woo ,  Ye Seul Kim ,  Tae Jun Park ,  Duk Il Suh

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/38

Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.

公开(公告)号：US11411142B2

公开(公告)日：2022-08-09

申请号：US17025273

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

IPC: H01L33/40 ,  H01L51/10 ,  H01S5/125

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US10950757B2

公开(公告)日：2021-03-16

申请号：US16549556

申请日：2019-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

IPC: H01L33/40 ,  H01L51/10 ,  H01S5/125

Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.