公开(公告)号：US11804573B2

公开(公告)日：2023-10-31

申请号：US17119139

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Toshiya Yokogawa ,  Chae Hon Kim ,  Chung Hoon Lee

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/60

Abstract: A group III-V light-emitting diode is provided. The light-emitting diode includes a light generating portion including an active layer interposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The active layer generates light. The light-emitting diode further includes an optical trap disposed on an optical path of light generated from the active layer. The optical trap includes a light absorption layer interposed between light guide layers. The light-emitting diode further includes a side reflector disposed on a side surface of the optical trap.