公开(公告)号：US10979013B2

公开(公告)日：2021-04-13

申请号：US16978950

申请日：2019-05-05

Applicant: SHANDONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Da Chen ,  Hongfei Wang ,  Peng Wang ,  Xiaojun Zhang ,  Zhongli Li

IPC: H03H9/17 ,  H03H3/02 ,  H01L41/08 ,  H01L41/332 ,  H01L41/314 ,  H01L41/27

Abstract: Disclosed is a method of manufacturing a piezoelectric thin film resonator on a non-silicon substrate, including the following steps: depositing a copper thin film on a silicon wafer; coating photoresist on the copper thin film to perform photoetching so as to remove photoresist in an air gap region under the piezoelectric thin film resonator to be disposed; electroplating-depositing a copper layer, and removing photoresist to obtain a stepped peel sacrifice layer; coating polyimide and performing imidization by heat treatment, making a sandwich structure of the piezoelectric thin film resonator above the polyimide layer; performing etching for the polyimide layer in a region not covered by the piezoelectric thin film resonator by oxygen plasma; placing the obtained device into a copper corrosion solution to dissolve the copper around and under the piezoelectric thin film resonator, attaching a drum coated with polyvinyl alcohol glue onto the piezoelectric thin film resonator, releasing and peeling it from the silicon wafer and then transferring it to a desired non-silicon substrate; washing the drum with hot water to separate the drum from the piezoelectric thin film resonator so as to complete the manufacturing process.