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公开(公告)号：US20240049523A1
公开(公告)日：2024-02-08
申请号：US17623501
申请日：2021-12-20
发明人： Weiran Cao , Gaobo Lin , Yuanjun Hsu
IPC分类号： H10K59/124
CPC分类号： H10K59/124
摘要： A flexible display panel and a flexible array substrate are provided, which include a flexible substrate, a thin film transistor layer, and an organic planarization layer. The thin film transistor layer is disposed on the flexible substrate and in a display area and includes a plurality of insulating layers disposed in a stack, wherein, a surface of the thin film transistor layer away from the flexible substrate is provided with first through-holes penetrating at least one of the insulating layers. The organic planarization layer covers one side of the thin film transistor layer away from the flexible substrate and is filled in the first through-holes.
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公开(公告)号：US11355571B2
公开(公告)日：2022-06-07
申请号：US16619830
申请日：2019-11-20
发明人： Zhenguo Lin , Xingyu Zhou , Yuanjun Hsu
摘要： The present disclosure provides an OLED display panel which includes a substrate, a drive circuit layer, a light-emitting functional layer, and a pixel definition layer. The light-emitting functional layer includes a light-emitting area and a non-light-emitting area. The drive circuit layer includes a buffer layer, a first electrode plate, and a second electrode plate, and the first electrode plate and the second electrode plate form a storage capacitor. It solves the technical problem of current OLED display panels having dark stripes by not depositing the first electrode plate when silicon nitride is deposited to form a first buffer layer which prevents ionic gases produced when silicon nitride is deposited from having a reduction reaction with the first electrode plate.
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3.发明授权公开(公告)号：US10985226B2
公开(公告)日：2021-04-20
申请号：US16009569
申请日：2018-06-15
发明人： Zhaosong Liu , Yuanjun Hsu
摘要： Provided are an ink jet printing organic light emitting diode display panel and a manufacturing method thereof. The method includes: sequentially forming a passivation layer and a planarization layer on a carrier substrate prepared with one pair of thin film transistors, wherein the passivation layer covers the one pair of thin film transistors; forming one pair of vias in the passivation layer and the planarization layer; forming one pair of anodes on the planarization layer, wherein the one pair of anodes are electrically connected to the one pair of thin film transistors through the one pair of vias in the passivation layer and the planarization layer; preparing an electrode separation layer between the one pair of anodes with Al2O3 or an organic photoresist material; forming a light emitting layer over the one pair of anodes by ink jet printing, wherein the light emitting layer covers the electrode separation layer.
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公开(公告)号：US12080543B2
公开(公告)日：2024-09-03
申请号：US17622617
申请日：2021-12-16
发明人： Yuanpeng Chen , Yuanjun Hsu
IPC分类号： H01L27/12 , H01L23/532
CPC分类号： H01L27/1225 , H01L23/53214 , H01L23/53228 , H01L27/127
摘要： A display panel includes a substrate, a first metal layer, and a first insulating layer, an oxide semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, and a third metal layer stacked on each other sequentially. The first insulating layer includes a first region and a second region adjacent to the first region, and a thickness of the second region is less than a thickness of the first region. A projection of at least a portion of the oxide semiconductor layer projected on the substrate overlaps with a projection of the first metal layer projected on the substrate. The third metal layer is connected to the first metal layer through a third via hole, and the third via hole is extended through the first insulating layer and the third insulating layer.
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公开(公告)号：US20240047538A1
公开(公告)日：2024-02-08
申请号：US17419588
申请日：2021-05-10
发明人： Yuanpeng Chen , Yuanjun Hsu
IPC分类号： H01L29/417 , H01L29/786 , H01L29/66
CPC分类号： H01L29/41775 , H01L29/41733 , H01L29/78696 , H01L29/7869 , H01L29/66969
摘要： The present application provides a thin film transistor and a manufacturing method thereof. A substrate, an active layer, a first insulating layer, and a gate electrode are stacked and disposed in sequence, the second insulating layer is disposed on the substrate and covers the active layer, the first insulating layer, and the gate electrode. A source electrode and a drain electrode are separately disposed on a side of the second insulating layer away from the gate electrode, and any one of a projection of the source electrode on the active layer or a projection of the drain electrode on the active layer does not coincide with a projection of the gate electrode on the active layer. Thereby, a parasitic capacitance of the gate electrode and the source electrode can be reduced, and a parasitic capacitance of the gate electrode and the drain electrode can be reduced.
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公开(公告)号：US12133421B2
公开(公告)日：2024-10-29
申请号：US17419733
申请日：2021-05-27
发明人： Yuanpeng Chen , Yuanjun Hsu
IPC分类号： H10K59/122 , H10K59/12 , H10K71/13
CPC分类号： H10K59/122 , H10K59/1201 , H10K71/135
摘要： The present application provides a display panel, a manufacturing method thereof, and a display device; first intervals and second intervals are defined between a plurality of first electrodes, a plurality of first pixel banks are arranged corresponding to the first intervals, and a plurality of second pixel banks are arranged corresponding to the second intervals, wherein the second pixel banks cross over the first pixel banks, and a thickness of the second pixel banks is greater than a thickness of the first pixel banks, so that light-emitting materials of a same color can be continuously printed between adjacent ones of the second pixel banks.
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公开(公告)号：US11233074B2
公开(公告)日：2022-01-25
申请号：US16627784
申请日：2019-12-20
发明人： Zhenguo Lin , Xingyu Zhou , Yuanjun Hsu , Poyen Lu
摘要： The present application provides an array substrate and a manufacturing method thereof. The array substrate includes a thin film transistor and a storage capacitor prepared on a substrate; the thin film transistor includes a gate, an active layer, and a source/drain; the storage capacitor includes a first electrode and a second electrode isolated therefrom by a dielectric layer; the gate is disposed above the first electrode and located at one end of the first electrode; and the second electrode corresponds to a portion of the first electrode non-corresponding to the gate.
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公开(公告)号：US20230095169A1
公开(公告)日：2023-03-30
申请号：US17052148
申请日：2020-09-03
发明人： Shuning Zhao , Yuanjun Hsu
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
摘要： A thin film transistor (TFT) substrate, a manufacturing method thereof, a display panel are disclosed. The TFT substrate includes: a substrate; an active layer disposed above the substrate and including a channel region, a source region, and a drain region, wherein the channel region is made of an oxide semiconductor, the source region and the drain region are made of a conductive oxide semiconductor; a gate insulating layer and a gate sequentially disposed on the channel region; a titanium oxide layer covering the source region and the drain region; and a source and a drain disposed above the titanium oxide layer.
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公开(公告)号：US11329074B2
公开(公告)日：2022-05-10
申请号：US16619805
申请日：2019-11-21
发明人： Zhenguo Lin , Xingyu Zhou , Yuanjun Hsu
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L29/66 , H01L29/786
摘要： An array substrate, a manufacturing method thereof, and a display panel. The array substrate includes a light-emitting area and a non-light-emitting area. The array substrate comprises: a substrate; a gate insulating layer comprising a first gate insulating layer and a second gate insulating layer disposed on the substrate in sequence; and a storage capacitor disposed in the light-emitting area and comprising a first transparent electrode and a second transparent electrode. Wherein the first transparent electrode is disposed between the first gate insulating layer and the second gate insulating layer, and the second transparent electrode is disposed on the second gate insulating layer.
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公开(公告)号：US10608068B2
公开(公告)日：2020-03-31
申请号：US15579545
申请日：2017-11-20
发明人： Zhaosong Liu , Yuanjun Hsu
IPC分类号： H01L29/08 , H01L33/00 , H01L31/0232 , H01L21/00 , H01L51/40 , H01L27/32 , H01L29/786 , H01L51/52 , H01L51/56 , H01L51/50 , H01L21/77
摘要： The present disclosure relates to an OLED panel and a manufacturing method thereof. The OLED panel includes: a glass substrate; a TFT light shielding layer; a buffer layer, a semiconductor layer; a patterned gate insulating layer; a patterned first metal layer; a interlayer insulating layer; a patterned second metal layer; a passivation layer deposited on the second metal layer by atomic layer deposition; a color filter; a planarization layer, wherein the planarization layer is provided with an opening structure corresponding to a storage capacitor area; an anode; a pixel defining layer; a light emitting layer; and a cathode. The present disclosure further provides a manufacturing method of an OLED panel thereof. The OLED panel and the manufacturing method thereof of the present disclosure can effectively increase the storage capacitance of the OLED panel, reduce the design area of the storage capacitor, and improve the panel aperture ratio.
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