公开(公告)号：US20160093486A1

公开(公告)日：2016-03-31

申请号：US14867458

申请日：2015-09-28

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kunihiro MIYAZAKI ,  Kenji MINAMI ,  Yuji NAGASHIMA ,  Konosuke HAYASHI

IPC: H01L21/02 ,  B08B3/08

CPC classification number: H01L21/6708 ,  G03F7/423 ,  H01L21/31133

Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

Abstract translation: 根据一个实施例，基板处理装置包括第一液体供应器，第二液体供应器和控制器。 第一液体供应器向基材供应具有等于或高于过氧化氢水沸点的第一温度的硫酸溶液。 第二液体供应器用第二温度低于第一温度的硫酸溶液和过氧化氢水的混合物供应待处理的表面。 控制器控制第一液体供应商供应硫酸溶液，以将基底加热至过氧化氢水的沸点或更高。 当基板的温度变得等于或高于第二温度时，控制器控制第一液体供应商停止供应硫酸溶液并控制第二液体供应器供应混合物。