公开(公告)号：US20150090297A1

公开(公告)日：2015-04-02

申请号：US14495314

申请日：2014-09-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Jun MATSUSHITA ,  Yuji NAGASHIMA ,  Konosuke HAYASHI ,  Kunihiro MIYAZAKI

IPC: B08B3/08 ,  B08B3/02 ,  H01L21/67

CPC classification number: B08B3/08 ,  B08B3/02 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Abstract translation: 基板处理装置10具有除水单元110，当溶剂供给单元58向基板W的表面供给挥发性溶剂时，除水单元110向基板W的表面供给除水剂，以促进 用挥发性溶剂代替基材W表面上的清洗水。

公开(公告)号：US20170256423A1

公开(公告)日：2017-09-07

申请号：US15450542

申请日：2017-03-06

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuki SAITO ,  Konosuke HAYASHI ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67253

Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

公开(公告)号：US20150273491A1

公开(公告)日：2015-10-01

申请号：US14670983

申请日：2015-03-27

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takashi OOTAGAKI ,  Konosuke HAYASHI

IPC: B05B1/26

CPC classification number: B05B1/265 ,  B05B3/0409 ,  B05B3/0486 ,  B05B3/1064 ,  B05B13/0235 ,  B05C5/02 ,  B05C13/02 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus according to the embodiment includes: a nozzle which ejects a treatment liquid onto a treatment target surface of a substrate; a trajectory deflector including a trajectory deflecting surface, which is an annular inclined surface that deflects a traveling direction of the treatment liquid ejected from the nozzle and makes the treatment liquid incident on the treatment target surface, the trajectory deflecting surface having an inclination angle varying in a direction of annular extension of the trajectory deflecting surface; and a position changer which moves an incident position of the treatment liquid on the trajectory deflecting surface in the direction of annular extension of the trajectory deflecting surface.

Abstract translation: 本实施方式的基板处理装置包括：将处理液喷射到基板的处理对象面上的喷嘴; 包括轨迹偏转表面的轨迹偏转器，所述轨迹偏转表面是使从喷嘴喷出的处理液的行进方向偏转并使处理液入射到处理对象面的环状倾斜面，所述轨迹偏转面的倾斜角度变化 轨迹偏转表面的环形延伸方向; 以及位置变换器，其将处理液的入射位置沿轨迹偏转面的环状延伸方向移动到轨迹偏转面上。

公开(公告)号：US20170278729A1

公开(公告)日：2017-09-28

申请号：US15512308

申请日：2015-09-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Takashi OOTAGAKI

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/10 ,  B08B3/08

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10 ,  B08B2203/0288 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/68728 ,  H01L21/68785 ,  H01L21/68792

Abstract: According to one embodiment, a substrate processing apparatus includes: a removing part (D1) configured to remove liquid droplets present in a recess (30); a drain hole (30a) located at the bottom of the recess (30) of a nozzle head (32), and configured to discharge the liquid droplets as a target to be removed out of the recess (30); and a controller configured to control the discharge state of a gas discharge nozzle (33) such that there is a period in which a gas is discharged from the gas discharge nozzle (33) at a flow rate, at which the gas discharged does not reach a surface to be processed of s substrate W, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.

公开(公告)号：US20170259308A1

公开(公告)日：2017-09-14

申请号：US15608554

申请日：2017-05-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Jun MATSUSHITA ,  Yuji NAGASHIMA ,  Konosuke HAYASHI ,  Kunihiro MIYAZAKI

IPC: B08B3/08 ,  H01L21/67 ,  B08B3/02

CPC classification number: B08B3/08 ,  B08B3/02 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

公开(公告)号：US20140261566A1

公开(公告)日：2014-09-18

申请号：US14212899

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Masaaki FURUYA ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA ,  Atsushi KINASE ,  Masahiro ABE

IPC: B08B3/10

CPC classification number: B08B3/10 ,  H01L21/67028 ,  H01L21/67034

Abstract: A substrate processing device 10 includes a suction drying unit 65 drying a surface of a substrate W by absorbing and removing a liquid droplet of volatile solvent formed on the surface of the substrate W by a heating operation of a heating unit 64.

Abstract translation: 基板处理装置10包括吸引干燥单元65，其通过加热单元64的加热操作吸收和去除形成在基板W的表面上的挥发性溶剂的液滴来干燥基板W的表面。

公开(公告)号：US20250091095A1

公开(公告)日：2025-03-20

申请号：US18891253

申请日：2024-09-20

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Koichi HIGUCHI ,  Konosuke HAYASHI

IPC: B08B1/12 ,  B08B3/02

Abstract: According to one embodiment, a substrate cleaning apparatus includes: a cleaning liquid supply unit for supplying a cleaning liquid to a rotating substrate, a first cleaning head for cleaning at least one surface of the rotating substrate by bringing a brush into contact with the one surface of the substrate, a second cleaning head for cleaning the one surface of the substrate by bringing a brush into contact with the one surface of the substrate, a turning arm for turning the first cleaning head and the second cleaning head, and a controller. The controller controls the turning arm such that, during cleaning in which a brush of one of the first cleaning head and the second cleaning head is brought into contact with a surface of the substrate to perform cleaning, the brush of the other is positioned at a position outside the substrate.

公开(公告)号：US20180033651A1

公开(公告)日：2018-02-01

申请号：US15661480

申请日：2017-07-27

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Kunihiro MIYAZAKI

IPC: H01L21/67 ,  F16K37/00 ,  H01L21/687

CPC classification number: H01L21/6708 ,  F16K37/005 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/68764

Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.A processing liquid generator that generates processing liquid having undergone concentration adjustment includes a processing liquid adjuster (11a), which adjusts the concentration of the processing liquid, a first processing liquid path P1, through which the processing liquid flows to the processing liquid adjuster (11a), a second processing liquid path P2, through which the processing liquid flows to the processing liquid adjuster 11a, a first concentration meter 201a, which measures the concentration of the processing liquid flowing through the first processing liquid path P1, the measured concentration being the concentration of a component involved in the concentration adjustment in the processing liquid adjuster (11a), a second concentration meter 201b, which measures the concentration of the processing liquid flowing through the second processing liquid path P2, the measured concentration being the concentration of a component that is involved in the concentration adjustment and should be measured with the first concentration meter 201a in terms of concentration, a first valve mechanism 120a/130a, which opens and closes the first processing liquid path P1, and a second valve mechanism 120b/130b, which opens and closes the second processing liquid path P2.

公开(公告)号：US20160062372A1

公开(公告)日：2016-03-03

申请号：US14939008

申请日：2015-11-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Takashi OOTAGAKI ,  Emi MATSUI

IPC: G05D11/13 ,  G05D9/12 ,  B05B12/00

CPC classification number: G05D11/13 ,  B05B12/006 ,  B05B13/0242 ,  B05C5/02 ,  G05D9/12 ,  H01L21/67017 ,  H01L21/6708

Abstract: A liquid feeding device that feeds a treatment liquid to a treating device and also recovers the treatment liquid for re-feeding, include feeding tanks having an exhaust passage and an overflow line, and can be switched to one of a feeding mode in which the treatment liquid is fed and a standby mode in which the feeding tank is on standby while accommodating the treatment liquid; a feeding mechanism that feeds the treatment liquid to the treating device from the feeding tank in the feeding mode among the plurality of feeding tanks; a recovery mechanism that recovers and returns the treatment liquid excessive in the treatment device to the feeding tank in the feeding mode; and an on-off mechanism provided in each of the plurality of feeding tanks to block the exhaust passage and the overflow line is provided.

Abstract translation: 将处理液供给到处理装置并回收用于再供给的处理液的液体供给装置包括具有排气通路和溢流管线的供给槽，并且能够切换为进给模式，其中处理 进料液体和备用模式，其中进料罐在容纳处理液体的同时待机; 供给机构，其在所述多个供给槽中以所述供给方式从所述供给槽将所述处理液供给到所述处理装置; 回收机构，其将处理装置中的处理液回收并返回给供给罐; 并且设置在多个供给槽中的每一个中以阻断排气通道和溢流管线的开关机构。

公开(公告)号：US20230307262A1

公开(公告)日：2023-09-28

申请号：US18123793

申请日：2023-03-20

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Koichi HIGUCHI

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67253

Abstract: According to one embodiment, a substrate processing apparatus includes: a holding unit that holds a substrate; a driving unit that is provided in the holder and rotates the substrate together with the holder; a supply unit that supplies a processing liquid to a target surface of the substrate; a first cup provided to surround the substrate; a second cup provided to surround the first cup and having an inner wall surface having a property different from a property of an inner wall surface of the first cup; and a movement controller that moves the first cup and the second cup such that the processing liquid scattered from the substrate is received either on the inner wall surface of the first cup or on the inner wall surface of the second cup.