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    SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD
    2.
    发明申请
    SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD 有权

    公开(公告)号：US20170256423A1

    公开(公告)日：2017-09-07

    申请号：US15450542

    申请日：2017-03-06

    Applicant: SHIBAURA MECHATRONICS CORPORATION

    Inventor： Yuki SAITO ,  Konosuke HAYASHI ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA

    IPC: H01L21/67

    CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67253

    Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

    SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
    5.
    发明申请
    SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS 有权

    公开(公告)号：US20220037149A1

    公开(公告)日：2022-02-03

    申请号：US17372931

    申请日：2021-07-12

    Applicant: Shibaura Mechatronics Corporation

    Inventor： Yuji NAGASHIMA

    IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  A46B13/00 ,  A46B13/02 ,  A46B9/00

    Abstract: According to one embodiment, a substrate treatment method of removing an upper end of a protrusion on a substrate is disclosed. An unevenness is formed on a surface of the substrate. The method can supply a first liquid on the surface of the substrate. The unevenness is formed on the surface. The method can form a protective layer. The protective layer covers the surface of the substrate from the first liquid supplied to the surface of the substrate. The method can supply a second liquid onto the protective layer. In addition the method can physically remove the protective layer which is on the upper end of the protrusion, and can bring the second liquid into contact with the upper end of the protrusion. The protective layer is removed from the upper end of the protrusion.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    6.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号：US20160093486A1

    公开(公告)日：2016-03-31

    申请号：US14867458

    申请日：2015-09-28

    Applicant: SHIBAURA MECHATRONICS CORPORATION

    Inventor： Kunihiro MIYAZAKI ,  Kenji MINAMI ,  Yuji NAGASHIMA ,  Konosuke HAYASHI

    IPC: H01L21/02 ,  B08B3/08

    CPC classification number: H01L21/6708 ,  G03F7/423 ,  H01L21/31133

    Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

    Abstract translation: 根据一个实施例，基板处理装置包括第一液体供应器，第二液体供应器和控制器。 第一液体供应器向基材供应具有等于或高于过氧化氢水沸点的第一温度的硫酸溶液。 第二液体供应器用第二温度低于第一温度的硫酸溶液和过氧化氢水的混合物供应待处理的表面。 控制器控制第一液体供应商供应硫酸溶液，以将基底加热至过氧化氢水的沸点或更高。 当基板的温度变得等于或高于第二温度时，控制器控制第一液体供应商停止供应硫酸溶液并控制第二液体供应器供应混合物。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    7.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
    基板处理装置和基板处理方法

    公开(公告)号：US20160025409A1

    公开(公告)日：2016-01-28

    申请号：US14773055

    申请日：2014-02-28

    Applicant: SHIBAURA MECHATRONICS CORPORATION

    Inventor： Kunihiro MIYAZAKI ,  Konosuke HAYASHI ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA

    IPC: F26B3/30 ,  F26B7/00 ,  F26B11/18 ,  F26B5/00

    CPC classification number: F26B3/30 ,  F26B3/28 ,  F26B5/005 ,  F26B7/00 ,  F26B11/18 ,  H01L21/02057 ,  H01L21/67034 ,  H01L21/67115

    Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.

    Abstract translation: 根据一个实施例，一种基板处理装置（1）包括：配置成支撑基板W的台（4），配置成将挥发性溶剂供应到工作台（4）上的基板W的表面的溶剂供应单元（8） ）和被配置为向已经供给了挥发性溶剂的基板W发光的照射器（10），并且用作加热基板W的加热器，使得在基板W的表面上形成气体层 使挥发性溶剂成为液体球。 因此，可以成功地干燥基板以及抑制图案塌陷。

    SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
    10.
    发明申请
    SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号：US20140261549A1

    公开(公告)日：2014-09-18

    申请号：US14212218

    申请日：2014-03-14

    Applicant: SHIBAURA MECHATRONICS CORPORATION

    Inventor： Konosuke HAYASHI ,  Masaaki FURUYA ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA ,  Atsushi KINASE ,  Masahiro ABE

    IPC: H01L21/67

    CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6776

    Abstract: A substrate processing device 100 includes a cleaning liquid supply unit 114 supplying a cleaning liquid to a surface of a substrate W, a solvent supply unit 115 supplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unit 117 heating the substrate W supplied with the volatile solvent, and a drying unit 118 drying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit 117, and the heating unit 117 and the drying unit 118 are arranged in a course of transportation of the substrate W transported from the solvent supply unit 115.

    Abstract translation: 基板处理装置100包括向基板W的表面供给清洗液的清洗液供给部114，向供给清洗液的基板W的表面供给挥发性溶剂的溶剂供给部115，以更换清洗液 在具有挥发性溶剂的基板W的表面上，加热单元117，加热供给挥发性溶剂的基板W，以及干燥单元118，通过除去表面上产生的挥发性溶剂的液滴来干燥基板W的表面 通过加热单元117的加热操作，加热单元117和干燥单元118在从溶剂供应单元115输送的基板W的输送过程中布置。

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