公开(公告)号：US10804121B2

公开(公告)日：2020-10-13

申请号：US15441709

申请日：2017-02-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Koichi Hamada ,  Nobuo Kobayashi

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/306 ,  G02F1/13

Abstract: According to an embodiment, a substrate treatment apparatus includes, a substrate support unit supporting a substrate, a rotary unit rotating the substrate, a treatment liquid supply unit supplying treatment liquid to a surface of the substrate, and a controller performing liquid discharge treatment to change liquid discharge velocity at which the treatment liquid is discharged from the substrate, at preset predetermined timing, during substrate treatment in which the treatment liquid is supplied while the substrate is rotated, with the treatment continued.

公开(公告)号：US10319602B2

公开(公告)日：2019-06-11

申请号：US14490939

申请日：2014-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo Kobayashi ,  Koichi Hamada ,  Yoshiaki Kurokawa ,  Masaaki Furuya ,  Hideki Mori ,  Yasushi Watanabe ,  Yoshinori Hayashi

IPC: H01L21/311 ,  B05C3/02 ,  H01L21/67

Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is, a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the phosphoric acid which was obtained by the phosphoric acid regenerating unit to the liquid etchant to be used at the etching treatment unit.

公开(公告)号：US10026760B2

公开(公告)日：2018-07-17

申请号：US14777694

申请日：2014-03-17

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Koichi Hamada ,  Nobuo Kobayashi

IPC: B08B3/04 ,  H01L27/12 ,  H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/02 ,  H01L21/687 ,  B08B3/00

Abstract: According to one embodiment, a substrate processing apparatus (1) includes: a support (4) configured to support a substrate (W); a rotation mechanism (5) configured to rotate the support (4) about an axis that crosses the substrate (W) supported by the support (4) as a rotation axis; a nozzle (6) configured to supply a treatment liquid to a surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5); a heater (8) configured to heat the substrate (W) supported by the support (4) at a distance from the substrate (W); and a movement mechanism (9) configured to move the heater (8) in directions toward and away from the substrate (W) supported by the support (4).