公开(公告)号：US12257595B2

公开(公告)日：2025-03-25

申请号：US18119401

申请日：2023-03-09

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki Furuya ,  Hiroaki Kobayashi ,  Hideki Mori

IPC: B05C11/10

Abstract: According to one embodiment, a processing liquid supply device includes a plurality of tanks, a supply path that supplies a processing liquid to a processing device, a heating unit that heats the processing liquid, a dilution unit that dilutes the processing liquid, a new-liquid supply unit that supplies a new liquid, a common flow path through which the processing liquid of the plurality of tanks passes, a switching unit that switches between the plurality of tanks so that at least a tank is selected from which the processing liquid passes to the common flow path, a densitometer provided in the common flow path, and a control device that controls at least one of the heating unit, the dilution unit, and the new-liquid supply unit so that the concentration reaches a target value set in advance.

公开(公告)号：US10319602B2

公开(公告)日：2019-06-11

申请号：US14490939

申请日：2014-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo Kobayashi ,  Koichi Hamada ,  Yoshiaki Kurokawa ,  Masaaki Furuya ,  Hideki Mori ,  Yasushi Watanabe ,  Yoshinori Hayashi

IPC: H01L21/311 ,  B05C3/02 ,  H01L21/67

Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is, a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the phosphoric acid which was obtained by the phosphoric acid regenerating unit to the liquid etchant to be used at the etching treatment unit.