公开(公告)号：US20190004420A1

公开(公告)日：2019-01-03

申请号：US15991359

申请日：2018-05-29

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Ryoken OZAWA ,  Takuro KOSAKA ,  Yukio INAZUKI

IPC: G03F1/50 ,  G03F1/32 ,  G03F1/54 ,  H01L21/033

Abstract: A photomask blank for an exposure light of ArF excimer laser, including a transparent substrate and a light-shielding film containing molybdenum, silicon, and nitrogen. The light-shielding film is formed in a single layer or a multilayer composed of a single composition layer or a composition gradient layer, a reflectance of the light-shielding film on a side remote from the substrate is 40% or less, and among the refractive indexes at the surfaces on the substrate side and the side remote from the substrate of all layers, a difference between the highest and lowest refractive indexes is 0.2 or less, and among the extinction coefficients at the surfaces, a difference between the highest and lowest extinction coefficients is 0.5 or less. The light-shielding film assumes a satisfactory and undeteriorated sectional shape of a mask pattern in an etching process in mask processing or defect correcting.

公开(公告)号：US20200096856A1

公开(公告)日：2020-03-26

申请号：US16570176

申请日：2019-09-13

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Takuro KOSAKA ,  Ryoken OZAWA

IPC: G03F1/26

Abstract: Provided is a phase shift-type photomask blank that includes a transparent substrate, and a phase shift film thereon, the phase shift film consisting of a single layer or multiple layers, the single layer or multiple layers including at least one layer selected from the group consisting of a layer composed of transition metal, silicon, nitrogen and oxygen, and a layer composed of silicon, nitrogen and oxygen, the phase shift film having a phase shift of 150 to 250°, and a transmittance of 60 to 80%, with respect to light having a wavelength of up to 200 nm, the phase shift film having a thickness of up to 150 nm, and the layer composed of transition metal, silicon, nitrogen and oxygen having a content (atomic ratio) of up to 0.03, as a ratio of the transition metal to a total content of the transition metal and silicon.

公开(公告)号：US20240345474A1

公开(公告)日：2024-10-17

申请号：US18621633

申请日：2024-03-29

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takahiro KISHITA ,  Ryoken OZAWA

IPC: G03F1/84 ,  G03F7/00 ,  G03F9/00

CPC classification number: G03F1/84 ,  G03F7/70033 ,  G03F7/70683 ,  G03F9/7088

Abstract: The present invention is a method for evaluating a reference mark formed on an EUV mask blank, the method including steps of: imaging the reference mark formed on the EUV mask blank to obtain a reference mark image; obtaining a reference mark contrast from the obtained reference mark image, the reference mark contrast being contrast between the reference mark and a background level; and evaluating processing accuracy of the reference mark with the obtained reference mark contrast. This provides a method for evaluating an EUV mask blank that can easily evaluate processing accuracy (for example, depth) of a reference mark.