Resist composition and patterning process
    1.
    发明申请
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号:US20020039701A1

    公开(公告)日:2002-04-04

    申请号:US09928455

    申请日:2001-08-14

    摘要: A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.

    摘要翻译: 共混有羟基苯乙烯,(甲基)丙烯酸叔烷基酯,(Mw)为1,000〜500,000的(甲基)丙烯酸烷氧基烷基酯的可取代的(甲基)丙烯酸烷氧基烷基酯作为基础树脂,以配制化学增幅正性抗蚀剂组合物,其具有显着提高对比度 暴露前后的碱溶解率,高灵敏度,高分辨率,曝光后的令人满意的图案轮廓,高耐蚀刻性和工艺适应性。

    Negative resist material and pattern formation method using the same
    2.
    发明申请
    Negative resist material and pattern formation method using the same 有权
    负电阻材料和使用其的图案形成方法

    公开(公告)号:US20040023151A1

    公开(公告)日:2004-02-05

    申请号:US10351097

    申请日:2003-01-23

    IPC分类号: G03C001/72 G03F007/033

    摘要: A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance. 1

    摘要翻译: 一种负型抗蚀剂材料,其至少包含含有由以下通式(1)表示的重均单元和重均分子量为1,000至500,000的高聚合物。 提供了负的抗蚀剂材料,特别是具有化学放大型的负型抗蚀剂材料,其在曝光后显示出高灵敏度,分辨率,曝光宽容度和工艺适应性以及良好的图案形状,并且还显示出优异的耐蚀刻性。