公开(公告)号：US20170253995A1

公开(公告)日：2017-09-07

申请号：US15519859

申请日：2015-09-17

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng QU ,  Fumio TAHARA ,  Masahiro SAKURADA ,  Shuji TAKAHASHI

IPC分类号： C30B33/02 ,  H01L21/322 ,  C30B29/06

CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L21/3225

摘要： A method for heat-treating a silicon single crystal wafer by an RTA treatment, including: putting a silicon single crystal wafer having an Nv region for the entire plane of the silicon single crystal wafer or an Nv region containing an OSF region for the silicon single crystal wafer entire plane into an RTA furnace, performing pre-heating at temperature lower than temperature at which silicon reacts with NH3 while supplying gas that contains NH3 into the RTA furnace, subsequently stopping the supply of the gas containing NH3 and starting supply of Ar gas to start an RTA treatment under Ar gas atmosphere in which the NH3 gas remains. This provide a method for heat-treating a silicon single crystal wafer that give gettering capability without degrading TDDB properties even to a silicon single crystal wafer in which the entire plane is an Nv region or an Nv region containing an OSF region.