公开(公告)号：US20170253995A1

公开(公告)日：2017-09-07

申请号：US15519859

申请日：2015-09-17

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng QU ,  Fumio TAHARA ,  Masahiro SAKURADA ,  Shuji TAKAHASHI

IPC分类号： C30B33/02 ,  H01L21/322 ,  C30B29/06

CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L21/3225

摘要： A method for heat-treating a silicon single crystal wafer by an RTA treatment, including: putting a silicon single crystal wafer having an Nv region for the entire plane of the silicon single crystal wafer or an Nv region containing an OSF region for the silicon single crystal wafer entire plane into an RTA furnace, performing pre-heating at temperature lower than temperature at which silicon reacts with NH3 while supplying gas that contains NH3 into the RTA furnace, subsequently stopping the supply of the gas containing NH3 and starting supply of Ar gas to start an RTA treatment under Ar gas atmosphere in which the NH3 gas remains. This provide a method for heat-treating a silicon single crystal wafer that give gettering capability without degrading TDDB properties even to a silicon single crystal wafer in which the entire plane is an Nv region or an Nv region containing an OSF region.

公开(公告)号：US20210062366A1

公开(公告)日：2021-03-04

申请号：US16962269

申请日：2018-12-25

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng QU ,  Ken SUNAKAWA ,  Tadashi NAKASUGI

IPC分类号： C30B33/02 ,  C30B1/02 ,  C30B29/06

摘要： A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.

公开(公告)号：US20220195620A1

公开(公告)日：2022-06-23

申请号：US17601112

申请日：2020-02-05

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng QU ,  Shizuo IGAWA

IPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/322

摘要： A method for manufacturing a silicon single crystal wafer for a multilayer structure device including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) or higher and composing an Nv region; and performing an RTA treatment in a nitrogen-containing atmosphere and a temperature of 1225° C. or higher, a mirror-polish processing treatment, and a BMD-forming heat treatment manufacturing a silicon single crystal wafer having at least a DZ layer with a thickness of 5 to 12.5 μm and a BMD layer positioned immediately below the DZ layer and a BMD density of 1×1011/cm3 or higher from the silicon single crystal wafer surface. During device formation, the silicon wafer surface stress is absorbed immediately below a surface layer, distortion defects are absorbed by the BMD layer, device formation region strength is enhanced, and surface layer dislocation occurrence and extension is suppressed.

公开(公告)号：US20160130718A1

公开(公告)日：2016-05-12

申请号：US14898329

申请日：2014-06-26

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng QU ,  Fumio TAHARA

IPC分类号： C30B1/04 ,  C30B29/06

CPC分类号： C30B1/04 ,  C30B29/06 ,  C30B33/02 ,  H01L21/324

摘要： A silicon wafer heat treatment method includes: placing a silicon wafer on a SiC jig and into a heat treatment furnace; performing heat treatment on the silicon wafer in the heat treatment furnace in a first non-oxidizing atmosphere; reducing the temperature; and carrying the silicon wafer out of the heat treatment furnace. In the heat reduction step, after the temperature is reduced to the temperature at which the silicon wafer can be carried out of the heat treatment furnace, the first non-oxidizing atmosphere is switched to an atmosphere containing oxygen, an oxide film having a thickness of 1 to 10 nm is formed on the surface of the SiC jig in the atmosphere containing oxygen, and the atmosphere containing oxygen is then switched to a second non-oxidizing atmosphere. A silicon wafer heat treatment method can prevent carbon contamination from a jig and an environment during a heat treatment process.

摘要翻译： 硅晶片热处理方法包括：将硅晶片放置在SiC夹具上并进入热处理炉; 在第一非氧化气氛中对热处理炉中的硅晶片进行热处理; 降低温度; 并将硅晶片从热处理炉中取出。 在减热步骤中，在将温度降低到能够从热处理炉中进行硅晶片的温度之后，将第一非氧化性气氛切换到含氧气氛，氧化膜厚度为 在含有氧的气氛中，在SiC夹具的表面上形成1〜10nm，然后将含氧气氛切换为第二非氧化性气氛。 硅晶片热处理方法可以在热处理过程中防止夹具和环境中的碳污染。