公开(公告)号：US20160126318A1

公开(公告)日：2016-05-05

申请号：US14785720

申请日：2014-03-28

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro SAKURADA

IPC分类号： H01L29/167 ,  C30B31/02 ,  C30B29/68 ,  C30B25/20 ,  C30B29/06

CPC分类号： H01L29/167 ,  C30B15/00 ,  C30B25/02 ,  C30B25/20 ,  C30B29/06 ,  C30B29/68 ,  C30B31/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/3225

摘要： A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot grown by the CZ method so as to have a carbon concentration ranging from 3×1016 to 2×1017 atoms/cm3, a first intermediate epitaxial layer doped with a dopant, and an epitaxial layer of a device forming region stacked on the first intermediate epitaxial layer, and to a method of producing this wafer. Also providing an industrially excellent silicon epitaxial wafer that is produced with a silicon substrate doped with carbon and used as a semiconductor device substrate such as a memory, a logic, or a solid-state image sensor, and a method of producing this silicon epitaxial wafer.

摘要翻译： 一种硅外延晶片，包括：通过从由CZ法生长的硅单晶锭切割而制成的硅衬底上的第二中间外延层，其碳浓度范围为3×1016至2×1017原子/ cm3， 掺杂有掺杂剂的第一中间外延层和堆叠在第一中间外延层上的器件形成区的外延层以及制造该晶片的方法。 还提供了一种工业上优异的硅外延晶片，该硅外延晶片由掺杂有碳的硅衬底制成并用作诸如存储器，逻辑或固态图像传感器的半导体器件衬底，以及制造该硅外延晶片的方法 。

公开(公告)号：US20160068992A1

公开(公告)日：2016-03-10

申请号：US14787368

申请日：2014-05-08

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro SAKURADA ,  Junya TOKUE ,  Ryoji HOSHI ,  Izumi FUSEGAWA

IPC分类号： C30B15/04 ,  C30B30/04 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

摘要： A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

摘要翻译： 一种磷掺杂硅单晶的制造方法，其特征在于，包括通过磁场施加切克劳斯基（MCZ）法从掺杂有磷的硅熔融物中提取磷掺杂的硅单晶，其中磷被掺杂，使得磷 磷掺杂硅单晶为2×1016原子/ cm3以上，并且以2000高斯或更高的中心磁场强度将水平磁场施加到硅熔体，使得将产生的磷掺杂硅单晶 氧浓度为1.6×1018原子/ cm3（ASTM'79）以上。 一种重掺杂磷，氧浓度为1.6×1018原子/ cm3（ASTM'79）以上的硅单晶的制造方法。

公开(公告)号：US20200240929A1

公开(公告)日：2020-07-30

申请号：US16636066

申请日：2018-07-27

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro SAKURADA ,  Makoto KOBAYASHI ,  Takeshi KOBAYASHI ,  Koichi KANAYA

IPC分类号： G01N21/95 ,  H01L21/66 ,  H01L21/02 ,  B24B9/06

摘要： A method evaluates an edge shape of a silicon wafer, in which as shape parameters in a wafer cross section, when defining a radial direction reference L1, a radial direction reference L2, an intersection point P1, a height reference plane L3, h1 [μm], h2 [μm], a point Px3, a straight line Lx, an angle θx, a point Px0, δ [μm], a point Px1, and a radius Rx [μm], the edge shape of the silicon wafer is measured, values of the shape parameters h1, h2, and δ are set, the shape parameters Rx and θx are calculated in accordance with the definition based on measurement data of the edge shape, and the edge shape of the silicon wafer is determined from the calculated Rx and θx to be evaluated. Consequently, a method evaluates an edge shape of a silicon wafer capable of preventing an occurrence of trouble.

公开(公告)号：US20170253995A1

公开(公告)日：2017-09-07

申请号：US15519859

申请日：2015-09-17

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng QU ,  Fumio TAHARA ,  Masahiro SAKURADA ,  Shuji TAKAHASHI

IPC分类号： C30B33/02 ,  H01L21/322 ,  C30B29/06

CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L21/3225

摘要： A method for heat-treating a silicon single crystal wafer by an RTA treatment, including: putting a silicon single crystal wafer having an Nv region for the entire plane of the silicon single crystal wafer or an Nv region containing an OSF region for the silicon single crystal wafer entire plane into an RTA furnace, performing pre-heating at temperature lower than temperature at which silicon reacts with NH3 while supplying gas that contains NH3 into the RTA furnace, subsequently stopping the supply of the gas containing NH3 and starting supply of Ar gas to start an RTA treatment under Ar gas atmosphere in which the NH3 gas remains. This provide a method for heat-treating a silicon single crystal wafer that give gettering capability without degrading TDDB properties even to a silicon single crystal wafer in which the entire plane is an Nv region or an Nv region containing an OSF region.