公开(公告)号：US11078598B2

公开(公告)日：2021-08-03

申请号：US16468413

申请日：2017-12-15

Applicant: SHOWA DENKO K.K.

Inventor： Yohei Fujikawa ,  Hidetaka Takaba

IPC: C30B29/36 ,  C30B23/06 ,  C30B23/00

Abstract: A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin−Pout, between partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.

公开(公告)号：US11781244B2

公开(公告)日：2023-10-10

申请号：US16963521

申请日：2018-12-21

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Takanori Kido ,  Masatake Nagaya ,  Hidetaka Takaba

IPC: C30B29/36 ,  B24B7/22 ,  C30B33/00 ,  H01L21/02

CPC classification number: C30B29/36 ,  B24B7/228 ,  C30B33/00 ,  H01L21/02013

Abstract: A seed crystal for single crystal 4H-SiC growth of the present invention is a disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter, in which one surface on which the single crystal 4H-SiC is grown is a mirror surface and an Ra of the other surface is more than 10 nm, and an absolute value of magnitude of waviness in a state where the seed crystal is freely deformed so that an internal stress distribution is reduced is less than or equal to 12 μm.