公开(公告)号：US11028474B2

公开(公告)日：2021-06-08

申请号：US16065257

申请日：2016-12-26

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke Tanimoto ,  Hideyuki Kurihara

IPC: C23C16/44 ,  C30B29/36 ,  C30B23/00 ,  C23C14/56 ,  B08B5/00 ,  B08B9/00 ,  C30B25/02

Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.

公开(公告)号：US12049406B2

公开(公告)日：2024-07-30

申请号：US17054548

申请日：2019-06-04

Applicant: SHOWA DENKO K.K.

Inventor： Jun Dou ,  Saki Mouri ,  Hideyuki Kurihara

IPC: C01B35/06

CPC classification number: C01B35/061 ,  C01P2004/61

Abstract: There is provided a method of producing boron trichloride, in which damage to a reaction container is inhibited. The method of producing boron trichloride includes performing reaction between chlorine gas in a gas containing the chlorine gas and particulate boron carbide (4) in a state in which the boron carbide (4) flows in the gas containing the chlorine gas.

公开(公告)号：US11878912B2

公开(公告)日：2024-01-23

申请号：US17052844

申请日：2019-06-04

Applicant: SHOWA DENKO K.K.

Inventor： Saki Mouri ,  Hideyuki Kurihara

IPC: C01B35/06

CPC classification number: C01B35/061 ,  C01P2004/61 ,  C01P2006/82

Abstract: A method of producing boron trichloride, which includes: a metal chlorination step of bringing a gas containing chlorine gas into contact with raw boron carbide as boron carbide including, as an impurity, a metal other than boron, and allowing the metal to react with the chlorine gas in the gas containing the chlorine gas, to form a metal chloride and to obtain boron carbide containing the metal chloride; a removal step of removing the metal chloride from the boron carbide containing the metal chloride, obtained in the metal chlorination step; and a generation step of bringing a gas containing chlorine gas into contact with the boron carbide from which the metal chloride has been removed in the removal step, and allowing the boron carbide and the chlorine gas in the gas containing the chlorine gas to react with each other to generate boron trichloride.