公开(公告)号：US11312625B2

公开(公告)日：2022-04-26

申请号：US16311404

申请日：2017-05-17

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke Tanimoto ,  Yasuyuki Hoshino

IPC: C01B17/16 ,  F17C1/00 ,  F17C1/14 ,  F17C5/06

Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.

公开(公告)号：US11028474B2

公开(公告)日：2021-06-08

申请号：US16065257

申请日：2016-12-26

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke Tanimoto ,  Hideyuki Kurihara

IPC: C23C16/44 ,  C30B29/36 ,  C30B23/00 ,  C23C14/56 ,  B08B5/00 ,  B08B9/00 ,  C30B25/02

Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.

公开(公告)号：US12116675B2

公开(公告)日：2024-10-15

申请号：US17418344

申请日：2019-12-10

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke Tanimoto ,  Shimon Osada

IPC: C23C8/08 ,  H01L21/02

CPC classification number: C23C8/08 ,  H01L21/02334

Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing an oxygen-containing compound gas.

公开(公告)号：US12074038B2

公开(公告)日：2024-08-27

申请号：US17612783

申请日：2020-11-24

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke Tanimoto

IPC: H01L21/56 ,  C23C8/28

CPC classification number: H01L21/568 ,  C23C8/28

Abstract: A method of manufacturing a passivation film, which includes a passivation process in which a substrate on the surface of which at least one of germanium and molybdenum is contained is treated with a passivation gas containing an oxygen-containing compound, which is a compound containing an oxygen atom in the molecule, and hydrogen sulfide to form a passivation film containing a sulfur atom on the surface of the substrate. The concentration of the oxygen-containing compound in the passivation gas is from 0.001 mole ppm to less than 75 mole ppm.

公开(公告)号：US11114305B2

公开(公告)日：2021-09-07

申请号：US16756914

申请日：2018-10-22

Applicant: SHOWA DENKO K.K.

Inventor： Yosuke Tanimoto

IPC: H01L21/311 ,  H01L21/3065 ,  H01L27/11582 ,  H01L27/11556

Abstract: An etching method which includes treating a workpiece having a stacked film (5) of a silicon oxide layer (2) and a silicon nitride layer (3) with an etching gas containing an unsaturated halon represented by the chemical formula: C2HxF(3−x)Br (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.