公开(公告)号：US20180130872A1

公开(公告)日：2018-05-10

申请号：US15565439

申请日：2016-04-20

Applicant: SHOWA DENKO K.K.

Inventor： Yuuki FURUYA ,  Tomohiro SHONAI ,  Yasushi URAKAMI ,  Itaru GUNJISHIMA

IPC: H01L29/04

CPC classification number: H01L29/045 ,  C30B23/025 ,  C30B29/36 ,  C30B33/00

Abstract: A SiC single crystal seed of the present invention has a main surface with an offset angle of at least 2° but not more than 20° relative to the {0001} plane, and at least one sub-growth surface, wherein the sub-growth surface includes an initial facet formation surface that is on the offset upstream side of the main surface and has an inclination angle θ relative to the {0001} plane with an absolute value of less than 2° in any direction, and the initial facet formation surface has a screw dislocation starting point.

公开(公告)号：US20150308014A1

公开(公告)日：2015-10-29

申请号：US14650169

申请日：2014-02-07

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  DENSO CORPORATION ,  SHOWA DENKO K.K.

Inventor： Itaru GUNJISHIMA ,  Yusuke KANZAWA ,  Yasushi URAKAMI ,  Masakazu KOBAYASHI

IPC: C30B29/36 ,  C30B29/64 ,  H01L29/16 ,  C30B23/02

CPC classification number: C30B29/36 ,  C30B19/12 ,  C30B23/025 ,  C30B25/186 ,  C30B29/64 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/32

Abstract: A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a direction with respect to a facet portion, while the region (B) is located in a direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate.

Abstract translation: SiC单晶在基本上平行于其c面的平面中包括在特定方向上具有汉堡矢量（A）的边缘位错不均匀分布的区域（A）和区域（B），其中 在特定方向上具有汉堡矢量（B）的基面位错不均匀分布。 区域（A）相对于小面部位于<1-100>方向，而区域（B）相对于小面部分位于<11-20>方向。 通过在大致平行于c面的方向上从SiC单晶切割SiC晶片，从SiC晶片切割SiC衬底，使得SiC衬底主要包含区域（A）和 区域（B）。 使用SiC衬底制造SiC器件。