公开(公告)号：US20200181797A1

公开(公告)日：2020-06-11

申请号：US16702905

申请日：2019-12-04

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI ,  Yoshishige OKUNO ,  Tomohiro SHONAI

IPC: C30B23/06 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.

公开(公告)号：US20200181796A1

公开(公告)日：2020-06-11

申请号：US16702749

申请日：2019-12-04

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI ,  Yoshishige OKUNO ,  Tomohiro SHONAI

IPC: C30B23/06 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.

公开(公告)号：US20180130872A1

公开(公告)日：2018-05-10

申请号：US15565439

申请日：2016-04-20

Applicant: SHOWA DENKO K.K.

Inventor： Yuuki FURUYA ,  Tomohiro SHONAI ,  Yasushi URAKAMI ,  Itaru GUNJISHIMA

IPC: H01L29/04

CPC classification number: H01L29/045 ,  C30B23/025 ,  C30B29/36 ,  C30B33/00

Abstract: A SiC single crystal seed of the present invention has a main surface with an offset angle of at least 2° but not more than 20° relative to the {0001} plane, and at least one sub-growth surface, wherein the sub-growth surface includes an initial facet formation surface that is on the offset upstream side of the main surface and has an inclination angle θ relative to the {0001} plane with an absolute value of less than 2° in any direction, and the initial facet formation surface has a screw dislocation starting point.

公开(公告)号：US20180355511A1

公开(公告)日：2018-12-13

申请号：US15779225

申请日：2016-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Tomohiro SHONAI ,  Masakazu KOBAYASHI ,  Masanori YAMADA

IPC: C30B29/36 ,  C30B23/02 ,  C01B32/956 ,  H01L29/16

Abstract: This method for producing a SiC single crystal includes a first growth step of growing a crystal from a seed crystal in a direction that is substantially orthogonal to the direction, a second growth step of growing the crystal in a direction that is substantially orthogonal to the direction and substantially orthogonal to the direction of crystal growth in the first growth step, a third growth step of growing the crystal along the direction of crystal growth in the first growth step but in the opposite orientation to the orientation of crystal growth in the first growth step, and a fourth growth step of growing the crystal along the direction of crystal growth in the second growth step but in the opposite orientation to the orientation of crystal growth in the second growth step.

公开(公告)号：US20200318254A1

公开(公告)日：2020-10-08

申请号：US16905337

申请日：2020-06-18

Applicant: SHOWA DENKO K.K.

Inventor： Tomohiro SHONAI ,  Masakazu Kobayashi ,  Masanori Yamada

IPC: C30B29/36 ,  C30B23/02 ,  C01B32/956 ,  H01L29/16

Abstract: A SiC single crystal, including: a seed crystal; a first growth portion formed in a direction that is substantially orthogonal to a direction; a second growth portion formed in a direction that is substantially orthogonal to the direction and substantially orthogonal to the direction in which the first growth portion is formed; a third growth portion that is formed on a surface of the seed crystal opposite the first growth portion; and a fourth growth portion that is formed on a surface of the seed crystal opposite the second growth portion.

公开(公告)号：US20190330761A1

公开(公告)日：2019-10-31

申请号：US16388968

申请日：2019-04-19

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI ,  Yoshishige OKUNO ,  Tomohiro SHONAI

IPC: C30B23/02

Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.