公开(公告)号：US20180355511A1

公开(公告)日：2018-12-13

申请号：US15779225

申请日：2016-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Tomohiro SHONAI ,  Masakazu KOBAYASHI ,  Masanori YAMADA

IPC: C30B29/36 ,  C30B23/02 ,  C01B32/956 ,  H01L29/16

Abstract: This method for producing a SiC single crystal includes a first growth step of growing a crystal from a seed crystal in a direction that is substantially orthogonal to the direction, a second growth step of growing the crystal in a direction that is substantially orthogonal to the direction and substantially orthogonal to the direction of crystal growth in the first growth step, a third growth step of growing the crystal along the direction of crystal growth in the first growth step but in the opposite orientation to the orientation of crystal growth in the first growth step, and a fourth growth step of growing the crystal along the direction of crystal growth in the second growth step but in the opposite orientation to the orientation of crystal growth in the second growth step.