公开(公告)号：US20180355511A1

公开(公告)日：2018-12-13

申请号：US15779225

申请日：2016-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Tomohiro SHONAI ,  Masakazu KOBAYASHI ,  Masanori YAMADA

IPC: C30B29/36 ,  C30B23/02 ,  C01B32/956 ,  H01L29/16

Abstract: This method for producing a SiC single crystal includes a first growth step of growing a crystal from a seed crystal in a direction that is substantially orthogonal to the direction, a second growth step of growing the crystal in a direction that is substantially orthogonal to the direction and substantially orthogonal to the direction of crystal growth in the first growth step, a third growth step of growing the crystal along the direction of crystal growth in the first growth step but in the opposite orientation to the orientation of crystal growth in the first growth step, and a fourth growth step of growing the crystal along the direction of crystal growth in the second growth step but in the opposite orientation to the orientation of crystal growth in the second growth step.

公开(公告)号：US20150308014A1

公开(公告)日：2015-10-29

申请号：US14650169

申请日：2014-02-07

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  DENSO CORPORATION ,  SHOWA DENKO K.K.

Inventor： Itaru GUNJISHIMA ,  Yusuke KANZAWA ,  Yasushi URAKAMI ,  Masakazu KOBAYASHI

IPC: C30B29/36 ,  C30B29/64 ,  H01L29/16 ,  C30B23/02

CPC classification number: C30B29/36 ,  C30B19/12 ,  C30B23/025 ,  C30B25/186 ,  C30B29/64 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/32

Abstract: A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a direction with respect to a facet portion, while the region (B) is located in a direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate.

Abstract translation: SiC单晶在基本上平行于其c面的平面中包括在特定方向上具有汉堡矢量（A）的边缘位错不均匀分布的区域（A）和区域（B），其中 在特定方向上具有汉堡矢量（B）的基面位错不均匀分布。 区域（A）相对于小面部位于<1-100>方向，而区域（B）相对于小面部分位于<11-20>方向。 通过在大致平行于c面的方向上从SiC单晶切割SiC晶片，从SiC晶片切割SiC衬底，使得SiC衬底主要包含区域（A）和 区域（B）。 使用SiC衬底制造SiC器件。