公开(公告)号：US11427929B2

公开(公告)日：2022-08-30

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia Yu ,  Naoto Ishibashi ,  Keisuke Fukada ,  Tomoya Utashiro ,  Hironori Atsumi

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/677 ,  H01L21/687 ,  H01L21/31 ,  H01L21/205 ,  C23C16/44 ,  H01L21/673 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

公开(公告)号：US11629433B2

公开(公告)日：2023-04-18

申请号：US16601915

申请日：2019-10-15

Applicant: SHOWA DENKO K.K.

Inventor： Tomoya Utashiro

IPC: C30B35/00 ,  C30B29/36 ,  C30B23/06

Abstract: The invention provides a SiC single crystal production apparatus with high uniformity of temperature distribution in a crystal growth vessel. The SiC single crystal production apparatus includes a crystal growth vessel containing SiC raw material; an insulation part covering the periphery of the crystal growth vessel; a heater used to heat the crystal growth vessel; and a holding member used to hold the crystal growth vessel, wherein the crystal growth vessel is held in a suspended state by the holding member.