公开(公告)号：US11424147B2

公开(公告)日：2022-08-23

申请号：US16621899

申请日：2018-05-09

Applicant: SHOWA DENKO K.K.

Inventor： Keisuke Fukada ,  Naoto Ishibashi ,  Hironori Atsumi

IPC: C30B35/00 ,  H01L21/67 ,  C23C16/32 ,  G01J5/00

Abstract: According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.

公开(公告)号：US11326275B2

公开(公告)日：2022-05-10

申请号：US16699355

申请日：2019-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu Umeta ,  Hironori Atsumi

IPC: C30B35/00 ,  C30B25/14 ,  C30B29/36

Abstract: A SiC epitaxial growth apparatus according to an embodiment includes a mounting stand on which a SiC wafer is mounted, and a furnace body which is configured to cover the mounting stand, and the furnace body includes a raw material gas supply port which is positioned so as to face the mounting stand and is configured to supply a raw material gas to the growth space, a first purge gas supply port which surrounds a vicinity of the raw material gas supply port and is configured to supply a purge gas to the growth space, and a second purge gas supply port which surrounds a vicinity of the first purge gas supply port and is configured to supply a purge gas to the growth space.

公开(公告)号：US11427929B2

公开(公告)日：2022-08-30

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia Yu ,  Naoto Ishibashi ,  Keisuke Fukada ,  Tomoya Utashiro ,  Hironori Atsumi

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/677 ,  H01L21/687 ,  H01L21/31 ,  H01L21/205 ,  C23C16/44 ,  H01L21/673 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

公开(公告)号：US20210217648A1

公开(公告)日：2021-07-15

申请号：US17211634

申请日：2021-03-24

Applicant: SHOWA DENKO K.K.

Inventor： Jia Yu ,  Naoto Ishibashi ,  Keisuke Fukada ,  Yoshikazu Umeta ,  Hironori Atsumi

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458

Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US20200173053A1

公开(公告)日：2020-06-04

申请号：US16699355

申请日：2019-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu Umeta ,  Hironori Atsumi

IPC: C30B25/14 ,  C30B29/36

Abstract: A SiC epitaxial growth apparatus according to an embodiment includes a mounting stand on which a SiC wafer is mounted, and a furnace body which is configured to cover the mounting stand, and the furnace body includes a raw material gas supply port which is positioned so as to face the mounting stand and is configured to supply a raw material gas to the growth space, a first purge gas supply port which surrounds a vicinity of the raw material gas supply port and is configured to supply a purge gas to the growth space, and a second purge gas supply port which surrounds a vicinity of the first purge gas supply port and is configured to supply a purge gas to the growth space.