公开(公告)号：US20230357600A1

公开(公告)日：2023-11-09

申请号：US18246798

申请日：2021-09-15

Applicant: SHOWA DENKO MATERIALS CO., LTD

Inventor： Satoshi FURUKAWA ,  Tomohiro IWANO ,  Shigeki KUBOTA ,  Atsuko UEDA ,  Koichi KAGESAWA

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31053 ,  C09K3/14

Abstract: A slurry containing: abrasive grains; a compound X having 3 or more carbon atoms; and water, in which the abrasive grains contain cerium oxide, and a dispersion term dD in Hansen solubility parameters of the compound X is 18.0 MPa1/2 or less. A polishing method including polishing a surface to be polished by using this slurry.

公开(公告)号：US20230392043A1

公开(公告)日：2023-12-07

申请号：US18246771

申请日：2021-09-15

Applicant: SHOWA DENKO MATERIALS CO., LTD.

Inventor： Shigeki KUBOTA ,  Tomohiro IWANO ,  Satoshi FURUKAWA ,  Koichi KAGESAWA ,  Atsuko UEDA

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/784

CPC classification number: C09G1/02 ,  H01L21/784 ,  H01L21/31053 ,  H01L21/304

Abstract: A slurry containing: abrasive grains; a compound X; and water, in which the abrasive grains contain cerium oxide, and a hydrogen bond term dH in Hansen solubility parameters of the compound X is 15.0 MPa1/2 or more. A polishing method including polishing a surface to be polished by using this slurry.