-
1.发明授权公开(公告)号：US08287645B2
公开(公告)日：2012-10-16
申请号：US13013270
申请日：2011-01-25
IPC分类号： C30B25/14
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并且允许多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。
-
2.发明授权公开(公告)号：US07922814B2
公开(公告)日：2011-04-12
申请号：US11556524
申请日：2006-11-03
IPC分类号： C30B21/02
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。
-
3.发明申请公开(公告)号：US20110165032A1
公开(公告)日：2011-07-07
申请号：US13013270
申请日：2011-01-25
IPC分类号： B01J19/00
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。
-
公开(公告)号：US20090246102A1
公开(公告)日：2009-10-01
申请号：US12471236
申请日：2009-05-22
申请人： Shuuichi Honda , Toru Tanaka , Satoshi Hayashida
发明人： Shuuichi Honda , Toru Tanaka , Satoshi Hayashida
CPC分类号： C01B33/027 , C01G9/04 , C01P2006/80
摘要： Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.
摘要翻译： 本发明提供一种使用气态原料与多种成分的反应生成固体成分的方法的制造方法和制造装置，其包括使用在垂直方向设置的反应器进行反应的工序; 从反应器的上部向气态原料供给多个组分的步骤; 在反应器的下部，形成由高密度气体构成的密封气体层，并从反应器的下部连续进料的工序; 从形成的密封气体层的上部的某处排出含有由反应产生的副产物气体和未反应的气态原料的排气的步骤; 以及在下部的密封气体层中容纳固体产物的步骤。
-
公开(公告)号：US08657956B2
公开(公告)日：2014-02-25
申请号：US12471236
申请日：2009-05-22
申请人： Shuuichi Honda , Toru Tanaka , Satoshi Hayashida
发明人： Shuuichi Honda , Toru Tanaka , Satoshi Hayashida
CPC分类号： C01B33/027 , C01G9/04 , C01P2006/80
摘要： Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.
摘要翻译： 本发明提供一种使用气态原料与多种成分的反应生成固体成分的方法的制造方法和制造装置，其包括使用在垂直方向设置的反应器进行反应的工序; 从反应器的上部向气态原料供给多个组分的步骤; 在反应器的下部，形成由高密度气体构成的密封气体层，并从反应器的下部连续进料的工序; 从形成的密封气体层的上部的某处排出含有由反应产生的副产物气体和未反应的气态原料的排气的步骤; 以及在下部的密封气体层中容纳固体产物的步骤。
-
公开(公告)号：US07553468B2
公开(公告)日：2009-06-30
申请号：US12044656
申请日：2008-03-07
申请人： Shuuichi Honda , Toru Tanaka , Satoshi Hayashida
发明人： Shuuichi Honda , Toru Tanaka , Satoshi Hayashida
CPC分类号： C01B33/027 , C01G9/04 , C01P2006/80
摘要： Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.
摘要翻译： 本发明提供一种通过气态原料与多种成分的反应来制造固体产物的方法，所述多种成分包括使用沿垂直方向设置的反应器进行反应的步骤; 从反应器的上部向气态原料供给多个组分的步骤; 在反应器的下部，形成由高密度气体构成的密封气体层，并从反应器的下部连续进料的工序; 从形成的密封气体层的上部的某处排出含有由反应产生的副产物气体和未反应的气态原料的排气的步骤; 以及在下部的密封气体层中容纳固体产物的步骤。
-
公开(公告)号：US08273316B2
公开(公告)日：2012-09-25
申请号：US13059961
申请日：2009-08-19
IPC分类号： C01B33/107
CPC分类号： C01B33/10778 , C01B33/10784
摘要： An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption.The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.
摘要翻译： 本发明的目的是提供四氯化硅的净化方法，其解决了通过蒸馏或吸附分离除去有机氯硅烷的问题。 四氯化硅的净化方法包括以下步骤：（1）使包含四氯化硅气体和含氧气体的混合气体与控制在200-450℃的催化剂层接触，并且其中 包括选自活性炭和金属负载活性炭中的至少一种，和（2）在接触后冷却混合气体以分离和回收液体四氯化硅。
-
8.发明申请HIGH PURITY CRYSTALLINE SILICON, HIGH PURITY SILICON TETRACHLORIDE AND PROCESSES FOR PRODUCING THE SAME 失效高纯度结晶硅，高纯度硅酮四氯乙烯及其制造方法公开(公告)号：US20110158885A1
公开(公告)日：2011-06-30
申请号：US13060669
申请日：2009-09-04
申请人： Satoshi Hayashida , Wataru Kato
发明人： Satoshi Hayashida , Wataru Kato
IPC分类号： C01B33/02 , C01B33/033 , C01B33/107
CPC分类号： C01B33/033 , C01B33/1071 , C30B29/06
摘要： An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C., whereby crude crystalline silicon is formed at a chip part of a silicon tetrachloride gas-supplying nozzle, and the crude crystalline silicon is grown downward from the chip part of the silicon tetrachloride gas-supplying nozzle; the grown crude crystalline silicon is discharged to an outside of the reactor, and the discharged crude crystalline silicon is subjected to acid treatment.
摘要翻译： 本发明的目的是提供更便宜的高纯度晶体硅，其不仅可以满足用于太阳能电池的硅原料所需的质量，而且可以满足硅所需的最新的一部分质量 半导体及其制造方法相同，并提供用于生产高纯度晶体硅的高纯度四氯化硅及其制备方法。 本发明的高纯度结晶硅的硼含量为0.015ppmw以下，锌含量为50〜1000ppbw。 根据本发明的高纯度晶体硅的制造方法的特征在于，将四氯化硅气体和锌气体供给至立式反应器，使其在800〜1200℃下反应，由此在 四氯化硅气体供给喷嘴的芯片部分，并且粗晶体硅从四氯化硅气体供应喷嘴的芯片部分向下生长; 将生长的粗晶硅排放到反应器外部，并将排出的粗结晶硅进行酸处理。
-
9.发明授权High purity crystalline silicon, high purity silicon tetrachloride for processes for producing the same 失效高纯度晶体硅，高纯度四氯化硅用于生产相同的方法公开(公告)号：US08658118B2
公开(公告)日：2014-02-25
申请号：US13060669
申请日：2009-09-04
申请人： Satoshi Hayashida , Wataru Kato
发明人： Satoshi Hayashida , Wataru Kato
IPC分类号： C01B33/08
CPC分类号： C01B33/033 , C01B33/1071 , C30B29/06
摘要： An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C., whereby crude crystalline silicon is formed at a chip part of a silicon tetrachloride gas-supplying nozzle, and the crude crystalline silicon is grown downward from the chip part of the silicon tetrachloride gas-supplying nozzle; the grown crude crystalline silicon is discharged to an outside of the reactor, and the discharged crude crystalline silicon is subjected to acid treatment.
摘要翻译： 本发明的目的是提供更便宜的高纯度晶体硅，其不仅可以满足用于太阳能电池的硅原料所需的质量，而且可以满足硅所需的最新的一部分质量 半导体及其制造方法相同，并提供用于生产高纯度晶体硅的高纯度四氯化硅及其制备方法。 本发明的高纯度结晶硅的硼含量为0.015ppmw以下，锌含量为50〜1000ppbw。 根据本发明的高纯度晶体硅的制造方法的特征在于，将四氯化硅气体和锌气体供给至立式反应器，使其在800〜1200℃下反应，由此在 四氯化硅气体供给喷嘴的芯片部分，并且粗晶体硅从四氯化硅气体供应喷嘴的芯片部分向下生长; 将生长的粗晶硅排放到反应器外部，并将排出的粗结晶硅进行酸处理。
-
公开(公告)号：US20110142742A1
公开(公告)日：2011-06-16
申请号：US13059961
申请日：2009-08-19
IPC分类号： C01B33/107
CPC分类号： C01B33/10778 , C01B33/10784
摘要： An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption.The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.
摘要翻译： 本发明的目的是提供四氯化硅的净化方法，其解决了通过蒸馏或吸附分离除去有机氯硅烷的问题。 四氯化硅的净化方法包括以下步骤：（1）使包含四氯化硅气体和含氧气体的混合气体与控制在200-450℃的催化剂层接触，并且其中 包括选自活性炭和金属负载活性炭中的至少一种，和（2）在接触后冷却混合气体以分离和回收液体四氯化硅。
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.026 秒)
