公开(公告)号：US08287645B2

公开(公告)日：2012-10-16

申请号：US13013270

申请日：2011-01-25

申请人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

发明人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

IPC分类号： C30B25/14

CPC分类号： C23C16/24 ,  B01J4/002 ,  B01J19/2415 ,  B01J2219/00135 ,  B01J2219/00159 ,  B01J2219/185 ,  C01B33/03 ,  Y10T117/10

摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并且允许多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。

公开(公告)号：US07922814B2

公开(公告)日：2011-04-12

申请号：US11556524

申请日：2006-11-03

申请人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

发明人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

IPC分类号： C30B21/02

CPC分类号： C23C16/24 ,  B01J4/002 ,  B01J19/2415 ,  B01J2219/00135 ,  B01J2219/00159 ,  B01J2219/185 ,  C01B33/03 ,  Y10T117/10

摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。

公开(公告)号：US20110165032A1

公开(公告)日：2011-07-07

申请号：US13013270

申请日：2011-01-25

申请人： SHUICHI HONDA ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

发明人： SHUICHI HONDA ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

IPC分类号： B01J19/00

CPC分类号： C23C16/24 ,  B01J4/002 ,  B01J19/2415 ,  B01J2219/00135 ,  B01J2219/00159 ,  B01J2219/185 ,  C01B33/03 ,  Y10T117/10

摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。

公开(公告)号：US07553468B2

公开(公告)日：2009-06-30

申请号：US12044656

申请日：2008-03-07

申请人： Shuuichi Honda ,  Toru Tanaka ,  Satoshi Hayashida

发明人： Shuuichi Honda ,  Toru Tanaka ,  Satoshi Hayashida

IPC分类号： C01B33/02 ,  B01J19/00

CPC分类号： C01B33/027 ,  C01G9/04 ,  C01P2006/80

摘要： Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.

摘要翻译： 本发明提供一种通过气态原料与多种成分的反应来制造固体产物的方法，所述多种成分包括使用沿垂直方向设置的反应器进行反应的步骤; 从反应器的上部向气态原料供给多个组分的步骤; 在反应器的下部，形成由高密度气体构成的密封气体层，并从反应器的下部连续进料的工序; 从形成的密封气体层的上部的某处排出含有由反应产生的副产物气体和未反应的气态原料的排气的步骤; 以及在下部的密封气体层中容纳固体产物的步骤。

公开(公告)号：US20090246102A1

公开(公告)日：2009-10-01

申请号：US12471236

申请日：2009-05-22

申请人： Shuuichi Honda ,  Toru Tanaka ,  Satoshi Hayashida

发明人： Shuuichi Honda ,  Toru Tanaka ,  Satoshi Hayashida

IPC分类号： B01J19/00 ,  B01J10/02

CPC分类号： C01B33/027 ,  C01G9/04 ,  C01P2006/80

摘要： Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.

摘要翻译： 本发明提供一种使用气态原料与多种成分的反应生成固体成分的方法的制造方法和制造装置，其包括使用在垂直方向设置的反应器进行反应的工序; 从反应器的上部向气态原料供给多个组分的步骤; 在反应器的下部，形成由高密度气体构成的密封气体层，并从反应器的下部连续进料的工序; 从形成的密封气体层的上部的某处排出含有由反应产生的副产物气体和未反应的气态原料的排气的步骤; 以及在下部的密封气体层中容纳固体产物的步骤。

公开(公告)号：US08657956B2

公开(公告)日：2014-02-25

申请号：US12471236

申请日：2009-05-22

申请人： Shuuichi Honda ,  Toru Tanaka ,  Satoshi Hayashida

发明人： Shuuichi Honda ,  Toru Tanaka ,  Satoshi Hayashida

IPC分类号： C30B25/14 ,  B01J19/00 ,  C01B33/02

CPC分类号： C01B33/027 ,  C01G9/04 ,  C01P2006/80

摘要： Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.

摘要翻译： 本发明提供一种使用气态原料与多种成分的反应生成固体成分的方法的制造方法和制造装置，其包括使用在垂直方向设置的反应器进行反应的工序; 从反应器的上部向气态原料供给多个组分的步骤; 在反应器的下部，形成由高密度气体构成的密封气体层，并从反应器的下部连续进料的工序; 从形成的密封气体层的上部的某处排出含有由反应产生的副产物气体和未反应的气态原料的排气的步骤; 以及在下部的密封气体层中容纳固体产物的步骤。

公开(公告)号：US09318764B2

公开(公告)日：2016-04-19

申请号：US14007241

申请日：2012-04-13

申请人： Toru Tanaka ,  Katsutoshi Suzuki ,  Haruhiko Komoriya ,  Arata Takahashi ,  Saori Itabashi

发明人： Toru Tanaka ,  Katsutoshi Suzuki ,  Haruhiko Komoriya ,  Arata Takahashi ,  Saori Itabashi

IPC分类号： H01M8/10 ,  H01B1/12 ,  C08J5/22

CPC分类号： H01M8/1039 ,  C08J5/2225 ,  H01B1/122 ,  H01M8/1011 ,  H01M8/1023 ,  H01M8/1037 ,  H01M8/1053 ,  Y02E60/523 ,  Y10T156/10

摘要： Disclosed is a proton conducting polymer membrane formed by laminating a plurality of solid electrolyte membranes. This proton conducting polymer membrane is one prepared by laminating at least one layer of a solid electrolyte membrane formed by using a resin having a bis(perfluoroalkanesulfonyl)methide group in the chemical structure. This solid electrolyte membrane has a superior proton conductivity without transmitting the fuel (methanol or hydrogen).

摘要翻译： 公开了通过层叠多个固体电解质膜形成的质子传导性聚合物膜。 该质子传导性聚合物膜是通过层叠通过在化学结构中使用具有双（全氟烷基磺酰基）甲硅烷基的树脂形成的至少一层固体电解质膜而制备的。 该固体电解质膜在不传输燃料（甲醇或氢）的情况下具有优异的质子传导性。

公开(公告)号：US09223501B2

公开(公告)日：2015-12-29

申请号：US13511102

申请日：2012-04-23

申请人： Atsumi Terayama ,  Akihisa Nagami ,  Toru Tanaka ,  Yasunori Kaneda ,  Yoshinori Okami

发明人： Atsumi Terayama ,  Akihisa Nagami ,  Toru Tanaka ,  Yasunori Kaneda ,  Yoshinori Okami

IPC分类号： G06F3/06 ,  G06F17/30 ,  G06F12/08 ,  G06F9/455

CPC分类号： G06F3/061 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/065 ,  G06F3/0662 ,  G06F3/067 ,  G06F9/45533

摘要： When migrating a virtual server between a plurality of physical servers, a pre-migration connection relationship between the virtual server and a storage area used by the virtual server is maintained after the migration of the virtual server by using a cooperative mechanism between a plurality of storage apparatuses even if the storage area used by the virtual server is migrated between the plurality of storage apparatuses. A computer system and virtual server migration control method for the computer system is described.

摘要翻译： 当在多个物理服务器之间迁移虚拟服务器时，在虚拟服务器通过使用多个存储器之间的协作机制迁移之后维护虚拟服务器与虚拟服务器使用的存储区域之间的预迁移连接关系 即使虚拟服务器使用的存储区域在多个存储装置之间迁移也是如此。 描述了用于计算机系统的计算机系统和虚拟服务器迁移控制方法。

公开(公告)号：US09153525B2

公开(公告)日：2015-10-06

申请号：US14073059

申请日：2013-11-06

申请人： Toru Tanaka

发明人： Toru Tanaka

IPC分类号： H01L23/48 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49513 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/06181 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2924/0002 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/351 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor element that includes an electrode layer on a surface of the semiconductor element; a low-strength layer that is provided on a surface of the electrode layer; a bonding layer that is provided on a surface of the low-strength layer; and a conductive plate that is provided on a surface of the bonding layer. Strength of the bonding layer is higher than strength of the electrode layer, and strength of the low-strength layer is lower than the strength of the electrode layer.

摘要翻译： 半导体器件包括：半导体元件，其包括在半导体元件的表面上的电极层; 设置在电极层的表面上的低强度层; 设置在低强度层的表面上的接合层; 以及设置在所述接合层的表面上的导电板。 接合层的强度高于电极层的强度，低强度层的强度低于电极层的强度。

公开(公告)号：US20130219138A1

公开(公告)日：2013-08-22

申请号：US13496036

申请日：2012-02-16

申请人： Hiroshi Nasu ,  Toru Tanaka

发明人： Hiroshi Nasu ,  Toru Tanaka

IPC分类号： G06F12/16

CPC分类号： G06F3/0608 ,  G06F3/061 ,  G06F3/0646 ,  G06F3/0662 ,  G06F3/067 ,  G06F11/1451 ,  G06F2201/84

摘要： A snapshot volume is migrated by using a primary volume of a migration destination storage apparatus.The management server comprises a controller for generational management, by means of the snapshot volumes, of differential data for the logical volume which is the parent volume of the snapshot volume, and, if an instruction to copy a snapshot volume of a designated generation is received and a snapshot volume prior to the designated generation of the copy instruction-target snapshot volume exists, the controller copies the differential data between the designated-generation snapshot volume and the existing snapshot volume, and associates the copied differential data with the existing snapshot volume.

摘要翻译： 使用迁移目的地存储设备的主卷迁移快照卷。 管理服务器包括用于通过快照卷对作为快照卷的父卷的逻辑卷的差异数据进行代数管理的控制器，以及如果接收到复制指定代的快照卷的指令 并且存在指定生成复制指令目标快照卷之前的快照卷，控制器将复制指定代快照卷与现有快照卷之间的差异数据，并将复制的差异数据与现有快照卷相关联。