公开(公告)号：US20190207329A1

公开(公告)日：2019-07-04

申请号：US16330284

申请日：2017-07-28

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： PHILIPP KNEISSL

IPC分类号： H01R4/38 ,  H01R4/30 ,  F16B37/04

CPC分类号： H01R4/38 ,  F16B4/004 ,  F16B37/04 ,  H01R4/308 ,  H01R4/34 ,  H01R25/162

摘要： A copper busbar has at least one stepped hole for fastening a cable shoe vi a screw connection. The stepped hole extends from a first surface of the copper busbar to a second surface of the copper busbar. The stepped hole has at least a first region, a second region and a third region, wherein the first region of the stepped hole adjoins the first surface, with a radius of the stepped hole being constant over the length of the second region with the second radius value. The third region adjoins the second surface, wherein the third region has at least at the second surface a radius with a third radius value which is less than the second radius value.

公开(公告)号：US20240096844A1

公开(公告)日：2024-03-21

申请号：US18265578

申请日：2021-10-13

申请人： Siemens Aktiengesellschaft

发明人： PHILIPP KNEISSL ,  FELIX ZEYSS ,  MARKUS PFEIFER

IPC分类号： H01L23/00 ,  H01L23/34 ,  H01L25/16

CPC分类号： H01L24/45 ,  H01L23/34 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/45015 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/48227 ,  H01L2924/13055 ,  H01L2924/13091

摘要： A semiconductor module includes a semiconductor element, a substrate, and a bond connector designed as a gate resistor, shunt, resistor in an RC filter or fuse. The bond connector includes a core made of a first metal material and a jacket which is designed to envelope the core and made from a second metal material that is different from the first metal material, with the first metal material having an electrical conductivity which is lower than an electrical conductivity of the second metal material. At least one of the semiconductor element and the substrate is connected to the bond connector.

公开(公告)号：US20230307250A1

公开(公告)日：2023-09-28

申请号：US18125442

申请日：2023-03-23

申请人： Siemens Aktiengesellschaft

发明人： PHILIPP KNEISSL ,  FLORIAN SCHWARZ ,  VOLKER MÜLLER ,  STEPHAN NEUGEBAUER ,  VLADIMIR DANOV

IPC分类号： H01L21/48 ,  H01L23/427

CPC分类号： H01L21/4871 ,  H01L23/427 ,  H01L24/48 ,  H01L2224/48247

摘要： In a method for producing an apparatus for cooling a semiconductor arrangement, a first cooling channel is produced in a metal body with a first FSC (Friction Stir Channeling) at a first depth from a surface of the metal body. Using the first FSC method, a first connecting channel is produced extending from the first cooling channel to the surface of the metal body. Using second FSC method a second cooling channel is produced in the metal body at a second depth from the surface of the metal body, with the second depth being smaller than the first depth. The first connecting channel forms a fluidic connection between the first cooling channel and the second cooling channel, and the first and second cooling channels and the first connecting channel form a cooling channel structure.