EPITAXIAL WAFER AND A METHOD OF MANUFACTURING THEREOF
    1.
    发明申请
    EPITAXIAL WAFER AND A METHOD OF MANUFACTURING THEREOF 有权
    外延波形及其制造方法

    公开(公告)号:US20150303071A1

    公开(公告)日:2015-10-22

    申请号:US14649114

    申请日:2013-12-03

    摘要: An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1×1016 atoms/cm3 or more and 1×1020 atoms/cm3 or less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940° C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

    摘要翻译: 外延晶片包括具有第一和第二侧的硅衬底晶片和沉积在第一侧上的硅外延层,以及可选地在硅外延层的顶部上的一个或多个另外的外延层,至少一个硅外延层或 所述一个或多个另外的外延层中的至少一个被掺杂浓度为1×1016原子/ cm3以上且1×1020原子/ cm3以下的氮。 通过在沉积气体气氛存在下通过化学气相沉积在940℃或更低的沉积温度下沉积硅外延层和/或一个或多个另外的外延层中的至少一个外延层来制造外延晶片, 一种或多种硅前体化合物和一种或多种氮前体化合物。