-
公开(公告)号：US20210309914A1
公开(公告)日：2021-10-07
申请号：US17346641
申请日：2021-06-14
发明人： Cheol Woo KIM , Min Kyung SEON , Yu Na SHIM , Jae Hoon KWAK , Young Bom KIM , Jong Ho LEE , Jin Kyung JO
IPC分类号： C09K13/06 , C07F7/18 , H01L21/4757
摘要： An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.
-
公开(公告)号：US20210062089A1
公开(公告)日：2021-03-04
申请号：US17009852
申请日：2020-09-02
发明人： Cheol Woo KIM , Kwang Kuk LEE , Jae Hoon KWAK , Young Bom KIM , Jung Ha SHIN , Jong Ho LEE , Jin Kyung JO
IPC分类号： C09K13/06 , H01L21/3105
摘要： An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn− is an n-valent anion, where n is an integer of 1 to 3.
-
公开(公告)号：US20210062088A1
公开(公告)日：2021-03-04
申请号：US16993424
申请日：2020-08-14
发明人： Cheol Woo KIM , Kwang Kuk LEE , Jae Hoon KWAK , Young Bom KIM , Jung Ha SHIN , Jong Ho LEE , Jin Kyung JO
IPC分类号： C09K13/06 , C09K13/08 , H01L21/311 , H01L21/3105 , H01L21/762
摘要： An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an organic phosphate represented by Formula 1 below: wherein R1 to R3 are independently hydrogen, or a substituted or unsubstituted hydrocarbyl group, and at least one of R1 to R3 is a substituted or unsubstituted hydrocarbyl group.
-
公开(公告)号：US20200331936A1
公开(公告)日：2020-10-22
申请号：US16839122
申请日：2020-04-03
发明人： Cheol Woo KIM , Min Kyung SEON , Yu Na SHIM , Jae Hoon KWAK , Young Bom KIM , Jong Ho LEE , Jin Kyung JO
IPC分类号： C07F7/18
摘要： The present disclosure relates to a silicon compound represented by Formula 1 below: wherein R1 to R6 are each independently selected from a hydrogen, a hydrocarbyl group and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y and Z are each independently selected from NR7, O, and S, where R7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR7, and A is an n-valent radical, where n is an integer of 1 to 6.
-
-
-
搜索结果
4 条记录 (耗时 0.018 秒)
