公开(公告)号：US10096633B2

公开(公告)日：2018-10-09

申请号：US15192816

申请日：2016-06-24

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Min-Ki Na ,  Dong-Hyun Woo ,  Ho-Ryeong Lee

IPC: H01L31/062 ,  H01L27/146 ,  H01L27/06 ,  H01L29/423

Abstract: An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.

公开(公告)号：US10356293B2

公开(公告)日：2019-07-16

申请号：US15251948

申请日：2016-08-30

Applicant: SK hynix Inc.

Inventor： Jong Eun Kim ,  Namil Kim ,  Dae-Woo Kim ,  Changsu Park ,  Dong-Hyun Woo

IPC: H04N5/225 ,  H01L27/146 ,  H01L27/148

Abstract: Provided is an image sensor having a pixel region including a plurality of pixel blocks disposed in a matrix form, outer address markers around the pixel region, interspaces between the plurality of pixel blocks, and inner address markers disposed in the interspaces.

公开(公告)号：US10008526B2

公开(公告)日：2018-06-26

申请号：US15238468

申请日：2016-08-16

Applicant: SK hynix Inc.

Inventor： Sung-Kun Park ,  Yun-Hui Yang ,  Pyong-Su Kwag ,  Dong-Hyun Woo ,  Young-Jun Kwon ,  Min-Ki Na ,  Cha-Young Lee ,  Ho-Ryeong Lee

IPC: H01L29/04 ,  H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

公开(公告)号：US09184203B2

公开(公告)日：2015-11-10

申请号：US14292401

申请日：2014-05-30

Applicant: SK hynix Inc.

Inventor： Do-Hwan Kim ,  Dong-Hyun Woo ,  Jong-Chae Kim ,  Chung-Seok Choi

IPC: H01L27/146 ,  H01L21/00

CPC classification number: H01L27/14638 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.

Abstract translation: 图像传感器包括：基板，包括光电转换区域，设置在基板的背面并适于产生磁场的磁性层;以及布置在磁性层上的滤色器和微透镜。