公开(公告)号：US09024366B2

公开(公告)日：2015-05-05

申请号：US13681355

申请日：2012-11-19

申请人： SK Hynix Inc.

发明人： Jong Il Kim

IPC分类号： H01L29/78 ,  H01L21/322 ,  H01L21/265 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/26513 ,  H01L21/28044 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/823418 ,  H01L21/823493 ,  H01L23/481 ,  H01L27/1052 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a dummy active region for metal ion gathering, which is capable of preventing device failure due to metal ion contamination, and a method of fabricating the same are provided. The semiconductor device includes active regions defined by an isolation layer in a semiconductor substrate and ion-implanted with an impurity, and a dummy active region ion-implanted with an impurity having a concentration higher than that of the impurity in the active region and configured to gather metal ions.

摘要翻译： 具有能够防止金属离子污染引起的器件故障的金属离子聚集用虚拟有源区的半导体器件及其制造方法。 半导体器件包括由半导体衬底中的隔离层和离子注入杂质限定的有源区和离子注入杂质浓度高于有源区杂质浓度的伪有源区， 聚集金属离子。

公开(公告)号：US09530693B2

公开(公告)日：2016-12-27

申请号：US14677903

申请日：2015-04-02

申请人： SK hynix Inc.

发明人： Jong Il Kim

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/768 ,  H01L29/78 ,  H01L21/322 ,  H01L21/311 ,  H01L27/105 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/26513 ,  H01L21/28044 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/823418 ,  H01L21/823493 ,  H01L23/481 ,  H01L27/1052 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a dummy active region for metal ion gathering, which is capable of preventing device failure due to metal ion contamination, and a method of fabricating the same are provided. The semiconductor device includes active regions defined by an isolation layer in a semiconductor substrate and ion-implanted with an impurity, and a dummy active region ion-implanted with an impurity having a concentration higher than that of the impurity in the active region and configured to gather metal ions.