公开(公告)号：US20150171133A1

公开(公告)日：2015-06-18

申请号：US14300948

申请日：2014-06-10

申请人： SK hynix Inc.

发明人： Do-Hwan KIM ,  Yun-Hee YANG ,  Dae-Woo KIM ,  Jong-Chae KIM ,  Su-Hwan LIM

IPC分类号： H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L29/76816 ,  H01L29/76825

摘要： An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.

摘要翻译： 一种年龄传感器，包括形成在基板上的转移门，形成在转移门侧的光电转换区，形成在转移门另一侧的沟槽的浮动扩散区， 沟槽和导电层，其在沟槽中间隙填充。