公开(公告)号：US20170310859A1

公开(公告)日：2017-10-26

申请号：US15251948

申请日：2016-08-30

Applicant: SK hynix Inc.

Inventor： Jong Eun KIM ,  Namil KIM ,  Dae-Woo KIM ,  Changsu PARK ,  Dong-Hyun WOO

IPC: H04N5/225

CPC classification number: H04N5/2253 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14812 ,  H04N5/369 ,  H04N5/376

Abstract: Provided is an image sensor having a pixel region including a plurality of pixel blocks disposed in a matrix form, outer address markers around the pixel region, interspaces between the plurality of pixel blocks, and inner address markers disposed in the interspaces.

公开(公告)号：US20150171133A1

公开(公告)日：2015-06-18

申请号：US14300948

申请日：2014-06-10

Applicant: SK hynix Inc.

Inventor： Do-Hwan KIM ,  Yun-Hee YANG ,  Dae-Woo KIM ,  Jong-Chae KIM ,  Su-Hwan LIM

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L29/76816 ,  H01L29/76825

Abstract: An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.

Abstract translation: 一种年龄传感器，包括形成在基板上的转移门，形成在转移门侧的光电转换区，形成在转移门另一侧的沟槽的浮动扩散区， 沟槽和导电层，其在沟槽中间隙填充。