公开(公告)号：US20170213958A1

公开(公告)日：2017-07-27

申请号：US15206092

申请日：2016-07-08

Applicant: SK hynix Inc.

Inventor： Beom Yong KIM ,  Soo Gil KIM ,  Won Ki JU

IPC: H01L45/00 ,  H01L43/08

CPC classification number: H01L45/1266 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1658

Abstract: A switching device includes a first electrode and a second electrode that are disposed over a substrate, and an electrolyte layer disposed between the first electrode and the second electrode and including a porous oxide. The switching device performs threshold switching operation on the basis of oxidation-reduction reactions of metal ions that are provided from the first electrode or the second electrode to the electrolyte layer.

公开(公告)号：US20220209110A1

公开(公告)日：2022-06-30

申请号：US17221616

申请日：2021-04-02

Applicant: SK hynix inc.

Inventor： Deok Lae AHN ,  Min Jin CHO ,  Won Ki JU

IPC: H01L45/00 ,  G11C13/00

Abstract: An electronic device comprising a semiconductor memory including a plurality of memory cells is provided. Each of the plurality of memory cells includes: a first electrode layer; a variable resistance layer disposed over the first electrode layer; a second electrode layer disposed over the variable resistance layer; and an interface electrode layer interposed between the first electrode layer and the variable resistance layer or between the second electrode layer and the variable resistance layer. The interface electrode layer includes a porous metal-containing layer.