公开(公告)号：US20190074436A1

公开(公告)日：2019-03-07

申请号：US15977606

申请日：2018-05-11

Applicant: SK hynix Inc.

Inventor： Tae Jung HA ,  Soo Gil KIM

IPC: H01L45/00

Abstract: A switching device includes a first switching element having a snap-back behavior characteristic, an output voltage of the first switching element decreasing when an input current increases from a turn-on threshold current of the first switching element. The switching device further includes a second switching element having a continuous-resistance behavior characteristic, an output voltage of the second switching element increasing when the input current increases from a turn-on threshold current of the second switching element. The turn-on threshold current of the first switching element is lower than the turn-on threshold current of the second switching element.

公开(公告)号：US20180061889A1

公开(公告)日：2018-03-01

申请号：US15789712

申请日：2017-10-20

Applicant: SK hynix Inc.

Inventor： Beom Yong KIM ,  Soo Gil KIM

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2427 ,  H01L27/2418 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. The second atom forms a trap site trapping a conductive carrier in the switching layer when a voltage having an absolute value that is smaller than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. The second atom forms a moving path through which the conductive carrier moves between the first electrode and the second electrode when a voltage having an absolute value that is greater than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes.

公开(公告)号：US20170170235A1

公开(公告)日：2017-06-15

申请号：US15154865

申请日：2016-05-13

Applicant: SK hynix Inc.

Inventor： Beom Yong KIM ,  Soo Gil KIM

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2427 ,  H01L27/2418 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A switching device includes a first electrode, a switching layer and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. A valence of the first atom and a valence of the second atom are different from each other.

公开(公告)号：US20140162429A1

公开(公告)日：2014-06-12

申请号：US14183161

申请日：2014-02-18

Applicant: SK hynix Inc.

Inventor： Myoung Sub KIM ,  Soo Gil KIM ,  Nam Kyun PARK ,  Sung Cheoul KIM ,  Gap Sok DO ,  Joon Seop SIM ,  Hyun Jeong LEE

IPC: H01L45/00

CPC classification number: H01L45/1675 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Abstract translation: 提供了一种半导体集成电路器件及其制造方法及其驱动方法。 该器件包括半导体衬底，从半导体衬底的表面延伸的上电极; 多个开关结构，其从与上述半导体基板的表面平行的方向从上述电极的两侧延伸;以及相变材料层，设置在上述多个开关结构体和上部电极之间。

公开(公告)号：US20230326523A1

公开(公告)日：2023-10-12

申请号：US18188332

申请日：2023-03-22

Applicant: SK hynix Inc. ,  Foundation for Research and Business, Seoul National University of Science and Technology ,  INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS

Inventor： Tae Jung HA ,  Soo Gil KIM ,  Jeong Hwan SONG ,  Byung Joon CHOI ,  Ha Young LEE

IPC: G11C11/16 ,  G11C13/00

CPC classification number: G11C13/003 ,  G11C11/1659 ,  G11C2213/72

Abstract: Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.

公开(公告)号：US20230005537A1

公开(公告)日：2023-01-05

申请号：US17855424

申请日：2022-06-30

Applicant: SK hynix Inc. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

Inventor： Tae Jung HA ,  Soo Gil KIM ,  Jeong Hwan SONG ,  Tae Joo PARK ,  Tae Jun SEOK ,  Hye Rim KIM ,  Hyun Seung CHOI

IPC: G11C13/00 ,  H01L45/00 ,  G11C11/16 ,  H01L27/24

Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

公开(公告)号：US20190319070A1

公开(公告)日：2019-10-17

申请号：US16455608

申请日：2019-06-27

Applicant: SK hynix Inc.

Inventor： Beom Yong KIM ,  Soo Gil KIM

IPC: H01L27/24 ,  H01L45/00 ,  G11C11/28

Abstract: A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

公开(公告)号：US20140286090A1

公开(公告)日：2014-09-25

申请号：US14297243

申请日：2014-06-05

Applicant: SK Hynix Inc.

Inventor： Hae Chan PARK ,  Soo Gil KIM

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C11/00 ,  G11C13/0004 ,  G11C13/0033 ,  G11C2013/0092 ,  Y10S977/754

Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.

公开(公告)号：US20240172569A1

公开(公告)日：2024-05-23

申请号：US18313248

申请日：2023-05-05

Applicant: SK hynix Inc.

Inventor： Jong Min YUN ,  Dae Eun KWON ,  Soo Gil KIM ,  Soo Man SEO ,  Tae Jung HA

IPC: H10N70/00

CPC classification number: H10N70/041 ,  H10N70/063 ,  H10N70/066 ,  H10N70/841 ,  H10N70/882

Abstract: A semiconductor device may include: a first conductive line extending in a first direction; a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line and extending in a second direction different from the first direction; and a selector layer disposed between the first conductive line and the second conductive line and extending in a direction crossing at least one of the first direction or the second direction, wherein the selector layer includes a trench formed on a surface of the selector layer and extending in the direction crossing at least one of the first direction or the second direction.

公开(公告)号：US20170213958A1

公开(公告)日：2017-07-27

申请号：US15206092

申请日：2016-07-08

Applicant: SK hynix Inc.

Inventor： Beom Yong KIM ,  Soo Gil KIM ,  Won Ki JU

IPC: H01L45/00 ,  H01L43/08

CPC classification number: H01L45/1266 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1658

Abstract: A switching device includes a first electrode and a second electrode that are disposed over a substrate, and an electrolyte layer disposed between the first electrode and the second electrode and including a porous oxide. The switching device performs threshold switching operation on the basis of oxidation-reduction reactions of metal ions that are provided from the first electrode or the second electrode to the electrolyte layer.