公开(公告)号：US20160300921A1

公开(公告)日：2016-10-13

申请号：US14828168

申请日：2015-08-17

Applicant: SK hynix Inc. ,  KOREA ADVANCED INSTUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byung Jin CHO ,  Hyun Jun AHN ,  Jung Min MOON

IPC: H01L29/51 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L21/02271 ,  H01L21/02118 ,  H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66583 ,  H01L29/7833

Abstract: A semiconductor element includes: a substrate; a gate dielectric layer formed over the substrate; a flat band voltage adjusting layer formed over the gate dielectric layer; and an intermediate layer formed between the gate dielectric layer and the flat band voltage adjusting layer. A negative flat band voltage generated at the intermediate layer and a positive flat band voltage generated between the substrate and the gate dielectric layer may offset each other.

Abstract translation: 半导体元件包括：基板; 形成在所述基板上的栅介质层; 形成在栅介电层上的平带电压调节层; 以及形成在栅介质层和平带电压调整层之间的中间层。 在中间层处产生的负平带电压和在基板和栅介质层之间产生的正平带电压可以相互抵消。

公开(公告)号：US20220246716A1

公开(公告)日：2022-08-04

申请号：US17591381

申请日：2022-02-02

Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

Inventor： Hyunsoo JIN ,  Byung Jin CHO ,  Seongho KIM

IPC: H01L49/02 ,  H01L27/108 ,  H01G4/10

Abstract: Disclosed are a capacitor for DRAM, a DRAM including the same, and a method of fabricating the same. The DRAM capacitor according to an embodiment may include a first electrode of the DRAM; a second electrode spaced apart from the first electrode; and a dielectric layer including a HfZrO film disposed between the first electrode and the second electrode. The HfZrO film may have an intermediate state corresponding to a phase transition region between a first state in which a tetragonal crystalline phase with anti-ferroelectricity property or a tetragonal crystalline phase is dominant, and a second state in which the orthorhombic crystalline phase with anti-ferroelectricity property or the orthorhombic crystalline phase is dominant. The HfZrO film may include both of the tetragonal crystalline phase and the orthorhombic crystalline phase. The HfZrO film maintains an intermediate state corresponding to the phase transition region within the operating voltage range of the capacitor.