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公开(公告)号：US12051714B2
公开(公告)日：2024-07-30
申请号：US17739214
申请日：2022-05-09
发明人： Shengxin Zhang , Chen Xu
IPC分类号： H01L27/146 , H04N25/75 , H04N25/771
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14621 , H01L27/14636 , H04N25/75 , H04N25/771
摘要： A pixel structure, an image sensor, an electronic device and a method for controlling an image sensor are provided. The pixel structure includes a plurality of pixel units arranged in an array, each pixel unit includes a first photoelectric conversion element; first transfer transistor, coupled to a first floating diffusion region, for transferring charges in the first photoelectric conversion element to the first floating diffusion region; a second photoelectric conversion element, where the sensitivity of the second photoelectric conversion element is lower than that of the first photoelectric conversion element; a second transfer transistor, coupled to a second floating diffusion region, for transferring charges in the second photoelectric conversion element to the second floating diffusion region; and a reading circuit, coupled to the first floating diffusion region and the second floating diffusion region, for reading voltage signals of the first floating diffusion region and the second floating diffusion region.
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公开(公告)号：US11848344B2
公开(公告)日：2023-12-19
申请号：US17564882
申请日：2021-12-29
发明人： Shengxin Zhang , Chen Xu , Guanjing Ren , Xiaoyong Wang , Jiaqing Hou
IPC分类号： H01L27/146 , H04N25/76
CPC分类号： H01L27/14621 , H01L27/1461 , H04N25/76
摘要： The present application provides a pixel structure, an image sensor, a device, an image processing method and a control method. The pixel structure includes a plurality of first pixels and a plurality of second pixels, where the first pixels adopt first photoelectric conversion elements arranged in an array and provided with high sensitivity, and the second pixels adopt second photoelectric conversion elements arranged in an array and provided with low sensitivity, to realize compatible recognition of high-brightness information and low-light information by the image sensor and improving the dynamic range; the first photoelectric conversion elements and the second photoelectric conversion elements adopt a design of independent output circuits to realize separate output of electrical signals without interfering with each other, which improves recognition reliability and signal utilization recognition; the overall performance of the image sensor can also be improved based on layout of the pixel structure of the present application.
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