公开(公告)号：US20180053783A1

公开(公告)日：2018-02-22

申请号：US15796329

申请日：2017-10-27

Applicant: Socionext Inc.

Inventor： Masaki TAMARU

IPC: H01L27/118 ,  H01L23/485 ,  H01L27/02 ,  H01L29/10 ,  H01L21/768

CPC classification number: H01L27/11807 ,  H01L21/76895 ,  H01L23/485 ,  H01L27/0207 ,  H01L29/1079 ,  H01L2027/11829 ,  H01L2027/11861 ,  H01L2027/11866 ,  H01L2027/11875 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.

公开(公告)号：US20180366490A1

公开(公告)日：2018-12-20

申请号：US16110203

申请日：2018-08-23

Applicant: SOCIONEXT INC.

Inventor： Masaki TAMARU ,  Kazuyuki NAKANISHI ,  Hidetoshi NISHIMURA

IPC: H01L27/118 ,  H01L27/02 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L27/11807 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/0928 ,  H01L27/11898 ,  H01L2027/11866 ,  H01L2027/11881 ,  H01L2027/1189

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.

公开(公告)号：US20150303216A1

公开(公告)日：2015-10-22

申请号：US14754174

申请日：2015-06-29

Applicant: SOCIONEXT INC.

Inventor： Masaki TAMARU

IPC: H01L27/118 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L21/76895 ,  H01L23/485 ,  H01L27/0207 ,  H01L29/1079 ,  H01L2027/11829 ,  H01L2027/11861 ,  H01L2027/11866 ,  H01L2027/11875 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.

Abstract translation: 局部互连形成为与杂质扩散区的上表面接触并且延伸到潜在的电源互连以下。 接触孔将局部互连电耦合到电源互连。 与杂质扩散区的上表面接触形成的局部互连用于将杂质扩散区电耦合到电势互连。

公开(公告)号：US20170317101A1

公开(公告)日：2017-11-02

申请号：US15651818

申请日：2017-07-17

Applicant: SOCIONEXT INC.

Inventor： Masaki TAMARU ,  Kazuyuki NAKANISHI ,  Hidetoshi NISHIMURA

IPC: H01L27/118 ,  H01L27/02 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L27/11807 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/0928 ,  H01L27/11898 ,  H01L2027/11866 ,  H01L2027/11881 ,  H01L2027/1189

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.

公开(公告)号：US20160322383A1

公开(公告)日：2016-11-03

申请号：US15204723

申请日：2016-07-07

Applicant: Socionext Inc.

Inventor： Masaki TAMARU

IPC: H01L27/118 ,  H01L27/02 ,  H01L29/10 ,  H01L21/768

CPC classification number: H01L27/11807 ,  H01L21/76895 ,  H01L23/485 ,  H01L27/0207 ,  H01L29/1079 ,  H01L2027/11829 ,  H01L2027/11861 ,  H01L2027/11866 ,  H01L2027/11875 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.

公开(公告)号：US20160247820A1

公开(公告)日：2016-08-25

申请号：US15147656

申请日：2016-05-05

Applicant: SOCIONEXT INC.

Inventor： Masaki TAMARU ,  Kazuyuki NAKANISHI ,  Hidetoshi NISHIMURA

IPC: H01L27/118

CPC classification number: H01L27/11807 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/0928 ,  H01L27/11898 ,  H01L2027/11866 ,  H01L2027/11881 ,  H01L2027/1189

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.