公开(公告)号：US20160204153A1

公开(公告)日：2016-07-14

申请号：US14912659

申请日：2014-08-15

Applicant: SONY CORPORATION

Inventor： Hiroshi TAYANAKA

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/036 ,  H04N5/3594 ,  H04N5/367 ,  H04N5/3745 ,  H04N5/37457

Abstract: The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated.A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.

Abstract translation: 本技术涉及一种固态成像装置及其制造方法以及可适当地产生精细像素信号的电子装置。 一种形成在第一半导体衬底上并累积光电转换电荷的电荷累积部分，形成在第二半导体衬底上并保持蓄积在电荷累积部分中的电荷的电荷保持部分，以及形成在第二半导体衬底上的转移晶体管 第一半导体衬底和第二半导体衬底，并且将积累在电荷累积部分中的电荷转移到电荷保持部分。 第一半导体衬底和第二半导体衬底之间的结合界面形成在转移晶体管的沟道中。

公开(公告)号：US20200273898A1

公开(公告)日：2020-08-27

申请号：US16867141

申请日：2020-05-05

Applicant: SONY CORPORATION

Inventor： Hiroshi TAYANAKA ,  Yuuji INOUE ,  Masashi NAKATA

IPC: H01L27/146

Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

公开(公告)号：US20180033809A1

公开(公告)日：2018-02-01

申请号：US15551129

申请日：2016-02-12

Applicant: SONY CORPORATION

Inventor： Hiroshi TAYANAKA ,  Kentaro AKIYAMA ,  Yorito SAKANO ,  Takashi OINOUE ,  Yoshiya HAGIMOTO ,  Yusuke MATSUMURA ,  Naoyuki SATO ,  Yuki MIYANAMI ,  Yoichi UEDA ,  Ryosuke MATSUMOTO

IPC: H01L27/146 ,  H04N5/217 ,  H04N5/378 ,  H04N5/355 ,  H04N5/367 ,  H04N5/374 ,  H04N5/235

CPC classification number: H01L27/146 ,  H01L27/0248 ,  H01L27/14 ,  H04N5/2173 ,  H04N5/2355 ,  H04N5/35554 ,  H04N5/35581 ,  H04N5/3559 ,  H04N5/367 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

公开(公告)号：US20160276396A1

公开(公告)日：2016-09-22

申请号：US14764685

申请日：2014-12-03

Applicant: SONY CORPORATION

Inventor： Hiroshi TAYANAKA ,  Yuuji INOUE ,  Masashi NAKATA

IPC: H01L27/146 ,  H04N5/378 ,  H04N9/077 ,  H04N5/374

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14818 ,  H04N5/374 ,  H04N5/378 ,  H04N9/077

Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

Abstract translation: 一种固态成像装置，包括作为相位差检测用像素的相位差检测像素， 第一成像像素，其是用于成像并且与相位差检测像素相邻的像素; 以及第二成像像素，其是除了第一成像像素之外的用于成像的像素。 第一成像像素的滤色器的区域小于第二成像像素的滤色器的面积。