公开(公告)号：US20180033809A1

公开(公告)日：2018-02-01

申请号：US15551129

申请日：2016-02-12

Applicant: SONY CORPORATION

Inventor： Hiroshi TAYANAKA ,  Kentaro AKIYAMA ,  Yorito SAKANO ,  Takashi OINOUE ,  Yoshiya HAGIMOTO ,  Yusuke MATSUMURA ,  Naoyuki SATO ,  Yuki MIYANAMI ,  Yoichi UEDA ,  Ryosuke MATSUMOTO

IPC: H01L27/146 ,  H04N5/217 ,  H04N5/378 ,  H04N5/355 ,  H04N5/367 ,  H04N5/374 ,  H04N5/235

CPC classification number: H01L27/146 ,  H01L27/0248 ,  H01L27/14 ,  H04N5/2173 ,  H04N5/2355 ,  H04N5/35554 ,  H04N5/35581 ,  H04N5/3559 ,  H04N5/367 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

公开(公告)号：US20160284753A1

公开(公告)日：2016-09-29

申请号：US15023466

申请日：2014-12-12

Applicant: SONY CORPORATION

Inventor： Naoki KOMAI ,  Naoto SASAKI ,  Naoki OGAWA ,  Takashi OINOUE ,  Hayato IWAMOTO ,  Yutaka OOKA ,  Masaya NAGATA

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/13

Abstract: A semiconductor device includes a first semiconductor substrate (12) in which a pixel region (21) where pixel portions (51) performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate (11) in which a logic circuit processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate (18) protecting an on-chip lens (16) is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin (17) interposed therebetween.

Abstract translation: 一种半导体器件，其特征在于，具备：第二半导体基板（12），在所述第一半导体基板（12）上形成二维排列有进行光电转换的像素部（51）的像素区域（21） 形成从像素部分输出的像素信号，层叠第一和第二半导体衬底。 保护片上透镜（16）的保护基板（18）设置在第一半导体衬底的像素区域中的片上透镜上，其间插入有密封树脂（17）。

公开(公告)号：US20170359541A1

公开(公告)日：2017-12-14

申请号：US15524185

申请日：2015-10-29

Applicant: SONY CORPORATION

Inventor： Takashi OINOUE

IPC: H04N5/374 ,  H04N5/372 ,  H01L27/148 ,  H04N5/345 ,  H04N3/14 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14 ,  H01L27/14625 ,  H01L27/14831 ,  H04N3/1512 ,  H04N5/345 ,  H04N5/37206

Abstract: The present disclosure relates to a solid-state imaging device capable of receiving light entering a gap between pixel regions of imaging units by the pixel region when a plurality of imaging units is arranged, a method of manufacturing the same, and an electronic device. A CMOS image sensor includes a pixel region formed of a plurality of pixels. A convex lens is provided for each of a plurality of CMOS image sensors. A plurality of CMOS image sensors is arranged on a supporting substrate. The present disclosure is applicable to a solid-state imaging device and the like in which a plurality of CMOS image sensors is arranged on the supporting substrate, for example.

公开(公告)号：US20170263665A1

公开(公告)日：2017-09-14

申请号：US15603210

申请日：2017-05-23

Applicant: SONY CORPORATION

Inventor： Naoki KOMAI ,  Naoto SASAKI ,  Naoki OGAWA ,  Takashi OINOUE ,  Hayato IWAMOTO ,  Yutaka OOKA ,  Masaya NAGATA

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/13

Abstract: A semiconductor device includes a first semiconductor substrate in which a pixel region where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate in which a logic circuit processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate protecting an on-chip lens is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin interposed therebetween.