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1.发明公开公开(公告)号：US20240250503A1
公开(公告)日：2024-07-25
申请号：US18560534
申请日：2022-01-13
发明人： SHOETSU NAGANE , TATSUSHI HAMAGUCHI , EIJI NAKAYAMA , KENTARO HAYASHI , HIDEKAZU KAWANISHI , RINTARO KODA
CPC分类号： H01S5/18388 , H01S5/0218 , H01S5/18361 , G03F7/20
摘要： To provide a semiconductor light-emitting device that has excellent productivity and is capable of aligning a current injection region and a lens with high accuracy, and a method of producing the semiconductor light-emitting device. A method of producing a light-emitting device according to the present technology includes: forming a light-blocking structure that is a structure opaque to an exposure wavelength on a side of a first main surface of a substrate having the first main surface and a second main surface on a side opposite to the first main surface; forming a photosensitive layer that is formed of a photosensitive material on a side of the second main surface of the substrate; applying light having the exposure wavelength to the substrate from the side of the first main surface and forming the photosensitive layer into a pattern corresponding to the light-blocking structure; and forming a lens using the photosensitive layer.
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公开(公告)号：US20230261438A1
公开(公告)日：2023-08-17
申请号：US18005089
申请日：2021-06-25
发明人： HIDEKI WATANABE , YUICHIRO KIKUCHI , SHINICHI AGATUMA , MAKOTO OOTA , TAKASHI MIZUNO , HIROYUKI MIYAHARA , EIJI NAKAYAMA
IPC分类号： H01S5/042 , H01S5/0237 , H01S5/22
CPC分类号： H01S5/04252 , H01S5/0237 , H01S5/22 , H01S5/343
摘要： A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer of a first conductivity type; an active layer; and a second semiconductor layer of a second conductivity type stacked on the first semiconductor layer with the active layer interposed therebetween, and provided with a strip-shaped ridge. The semiconductor laser further includes: a pair of resonator end faces facing each other across the ridge; and an electrode layer electrically coupled to an upper surface of the ridge.
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公开(公告)号：US20240313507A1
公开(公告)日：2024-09-19
申请号：US18577289
申请日：2022-03-09
IPC分类号： H01S5/183
CPC分类号： H01S5/18361 , H01S5/18305
摘要： [Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a semiconductor layer; a substrate; a first mirror; and a second mirror. The semiconductor layer includes an active layer formed of a first material. The substrate is bonded to the semiconductor layer, is formed of a second material having bandgap energy higher than that of the first material, and causes light of a specific wavelength to be transmitted therethrough. The first mirror is provided on a side of the semiconductor layer opposite to the substrate, and reflects the light of a specific wavelength. The second mirror is provided on a side of the substrate opposite to the semiconductor layer, and reflects the light of a specific wavelength.
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4.发明公开公开(公告)号：US20240120709A1
公开(公告)日：2024-04-11
申请号：US18264698
申请日：2022-01-19
IPC分类号： H01S5/0683 , H01S5/042 , H01S5/06 , H01S5/068 , H01S5/183
CPC分类号： H01S5/0683 , H01S5/0425 , H01S5/0601 , H01S5/06808 , H01S5/183
摘要： The present technology provides a surface emitting element capable of enabling highly accurate detection of an optical characteristic of an emitted light and/or enabling adjustment of the optical characteristic of the emitted light. The surface emitting element of the present technology provides a surface emitting element including a light emitting layer, a characteristic layer that is disposed on an optical path of light generated in the light emitting layer, exhibits an electrical characteristic due to light incidence, and/or has variability in an optical characteristic due to voltage application, and a plurality of electrodes provided on the characteristic layer.
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